Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method of producing semiconductor device
AssigneeHitachi Chemical Company, Ltd.
InventorsToshiyasu Kawai, Hidekazu Matsuura
Life of this patent
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Abstract
An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.
Claims20
An adhesive film for semiconductor, which is adapted for use in a process comprising bonding the adhesive film to a backside of a lead frame to protect the backside and then peeling off the adhesive film after bonding a semiconductor element to the lead frame and sealing them, and which comprises a support film and a resin layer coating one or each side of the support film, the support film having a linear thermal expansion coefficient of at most 3.0×10−5/° C. at 20 to 200° C.
An adhesive film for semiconductor, which is adapted for use in a process comprising bonding the adhesive film to a backside of a lead frame to protect the backside and then peeling off the adhesive film after bonding a semiconductor element to the lead frame and sealing them, and which comprises a support film and a resin layer coating one or each side of the support film, the support film having a thermal shrinkage ratio of at most 0.15% when heated to 200° C. for 2 hours.
An adhesive film for semeconductor, which is adapted for use in a process comprising bonding the adhesive film to a backside of a lead frame to protect the bsckside and then peeling off the adhesive film after bonding a semiconductor element to the lead frame and sealing them, and which comprises a support film and a resin layer coating one or each side of the support film, the ashesive film haveng at least one of following characteristics (1), (2) and (3):
- (1) the support film has a linear themal expansion coefficient of at most 3.0×10−5/° C. at 20 to 200° C.;
- (2) the support film has a thermal shrinkage ratio of at most 0.15% when heated to 200° C. for 2 hour;
- and
- (3) the adhesive film has a ratio of a thickness (A) of the resin layer to a thickness (B) of the support film, (A/B), of at most 0.5.
Dependencies are inferred from the claim text.