Data processor memory circuit
AssigneesArm Limited, University of Michigan
InventorsKrisztian Flautner, David T. Blaauw, Trevor N. Mudge, Nam S. Kim, Steven M. Martin
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AssigneesArm Limited, University of Michigan
InventorsKrisztian Flautner, David T. Blaauw, Trevor N. Mudge, Nam S. Kim, Steven M. Martin
Estimating the term…
A memory circuit for use in a data processing circuit is described, in which memory cells have at least two states, each state being determined by both a first voltage level corresponding to a first supply line and a second voltage level corresponding to a second supply line. The memory circuit comprises a readable state in which information stored in a memory cell is readable and an unreadable state in which information stored in said memory cell is reliably retained but unreadable. Changing the first voltage level but keeping the second voltage level substantially constant effects a transition between the readable state and the unreadable state. In use, the static power consumption of the memory cell in the unreadable state is less than static power consumption of the memory cell in the readable state.
A memory circuit for use in a data processing apparatus, in which memory cells have at least two states, each state being determined by both a first voltage level and a second voltage level, said memory circuit comprising:
A computer readable medium comprising a computer program for controlling a memory circuit having a plurality of memory cells, each of said plurality of memory cells having a readable state in which information stored in a memory cell is readable and an unreadable state in which information stored in said memory cell is retained but unreadable, said computer program comprising:
A method of predicting which region of a memory circuit will next be accessed during execution of program code by a processor, said memory circuit having a plurality of memory cell arrays each memory cell array having a respective plurality of memory cells that are collectively settable to said readable state or said unreadable state, said method comprising:
Memory access prediction circuitry operable to predict which region of a memory circuit will next be accessed during execution of program code by a processor, said memory circuit having a plurality of memory cell arrays each memory cell array having a respective plurality of memory cells that are collectively settable to said readable state or said unreadable state, said memory access prediction circuitry comprising:
Dependencies are inferred from the claim text.