Back to results
US 7,052,978 B2Granted
Arrangements incorporating laser-induced cleaving
AssigneeIntel Corporation
InventorsMohamad A. Shaheen, Mark Y. Liu, Mitchell C. Taylor
Life of this patent
Estimating the term…
Abstract
Arrangements incorporating laser-induced cleaving.
Claims38
A method comprising:
- forming a cleave layer in a substrate, wherein the cleave layer comprises silicon-germanium (SiGe), and the substrate comprises silicon;
- impinging laser energy on the substrate;
- and
- effecting laser-induced cleaving along the cleave layer by performing at least one of:
- stoichiometrically adjusting a Ge content in a SiGe material to form the cleave layer in the substrate to match a bond breaking energy involving the SiGe material to a laser energy characterized by a laser wavelength;
- and
- selecting the laser wavelength to provide the laser energy to substantially match a bond-breaking threshold energy of the material, based upon at least a stoichiometric composition of the SiGe material of the cleave layer, wherein the laser wavelength is tuned to provide the laser energy to be greater than a band gap of SiGe and smaller than that of Si.
4 more elements
A method comprising:
- simultaneously applying a plurality of interfering laser beams to a substrate induce cleaving of the substrate substantially along a laser-defined cleave plane;
- and
- designing a profile of a laser energy interference pattern along a thickness of the substrate to determine a depth of a desired cleave plane relative to a surface of the substrate.
Dependencies are inferred from the claim text.