US 7,051,945 B2 · Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Abstract

Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

Claims20

Dependent claims

An adjustable phase shifter formed on a substrate, comprising:

a conductor line on the substrate that includes a first conductive segment and a second conductive segment;
a thin film of nanowires formed on the substrate in electrical contact with said first conductive segment and said second conductive segment;
and
a plurality of gate contacts in electrical contact with said thin film of nanowires and positioned between said first conductive segment and said second conductive segment;
wherein a phase of an electrical signal transmitted through said conductor line is adjusted by changing a voltage applied to at least one gate contact of the plurality of gate contacts.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/674,071Filed 30 Sep 2003 · us provisional application

Priority

30 Sep 2002

Published

US 2004/0112964 A117 Jun 2004

Granted

30 May 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G11C 13/025
Using elements whose operation depends upon chemical change: using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
B82Y 10/00
Nanotechnology for information processing, storage or transmission
G11C 13/02
Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00: using elements whose…
H10D 30/43
FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels: having one-dimensional [1D] charge…

Family

Application60/414,323Us provisional application · filed 30 Sep 2002

Application60/445,421Us provisional application · filed 5 Feb 2003

Application60/468,276Us provisional application · filed 7 May 2003

Application60/474,065Us provisional application · filed 29 May 2003

Application60/493,005Us provisional application · filed 7 Aug 2003

US 2004/0112964 A1Pre-grant publication · published 17 Jun 2004

US 2005/0199731 A9Pre-grant publication · published 15 Sep 2005

US 7,051,945 B2This patent

From the US filing history. Foreign family members aren’t listed.

Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Life of this patent

Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Life of this patent

Abstract

Claims20