Pattern inspection method

A pattern inspection method comprising:

• calculating a maximum range (Δymax) of a measurement interval (Δy) along an inspection area length (L) of a line pattern based on the inspection area length (L) of the line pattern formed on a substrate and a user defined allowable error (p);
• measuring a plurality of edge positions or line widths on the line pattern at a selected interval within the maximum range (Δymax) that is smaller than or equal to the maximum range (Δymax) of the measurement interval using an ion beam based scanning microscope on the basis of two-dimensional distribution information about a reflected electron intensity or a secondary electron intensity obtained by observing the line pattern;
• and
• calculating unevenness of the edge on the line pattern in the inspection area, or calculating the line width, or calculating a variation in the line width from a measured result of a position of the edge or the line width measured.

A pattern inspection method comprising:

• measuring a plurality of edge positions or line widths on a line pattern in a measurement area shorter than an inspection area using an ion beam based scanning microscope on the basis of two-dimensional distribution information about a reflected electron intensity or a secondary electron intensity obtained by observing the line pattern;
• calculating a spatial-frequency distribution about unevenness of the edge on the line pattern in the measurement area, the line width, or a variation in the line width from a measured result of a position of the edge or the line width;
• obtaining an approximated curve by approximating the spatial-frequency distribution with a curve;
• estimating a spatial-frequency distribution intensity and a phase of f-components in the inspection area from the spatial-frequency distribution and the approximated curve;
• and
• calculating unevenness of the edge on the line pattern in the inspection area, or calculating the line width, or calculating a variation in the line width from the distribution intensity and the phase.

An improved micro electronic or micro optical product constructed by an improved process to produce fine line edge tolerances on line patterns in the micrometer range comprising:

• a substrate;
• a microelectronic line pattern formed on the substrate having line edges that vary in the line pattern dimensionally in length and width from intended manufactured error free straight line edges by the range including 0 micrometers to 1 micrometer in manufactured deviation dimensionally of length or width of the line edges of the line pattern;
• wherein said line patterns with the line edges are produced by first producing a beginning segment of the line pattern with the line edges and thereafter inspecting the line pattern by,
• setting a measurement area length (L2), when an inspection area length (L1) of a line pattern formed on a substrate measures 1 μm or more, by assuming the inspection area length (L1) multiplied by 0.5 or more to be the measurement area length (L2) and,
• also by assuming that when the inspection area length (L1) measures 0.5 μm or less, that the inspection area length (L1) is equal to the measurement area length (L2);
• and
• also by assuming that when the inspection area length (L1) equals greater than 0.5 μm to less than 1 μm that the measurement area length (L2) is 0.5 μm;
• measuring a plurality of line edge positions and/or line widths on the line pattern in the measurement area length (L2) using an ion beam based scanning microscope on the basis of two-dimensional distribution data information about a reflected electron intensity or a secondary electron intensity obtained by observing the line pattern;
• and
• calculating unevenness and deviation from the intended manufactured error free straight line edges of the line edge on the line pattern in the inspection area length (L2), or calculating the line width, or calculating a variation in the line width from a measured result of a position of the edge or from the line width measured;
• adjusting the line manufacturing process settings to produce the line edges and the line patterns so that the line pattern formed on the substrate has the line edges that vary in the line pattern dimensionally in length and width from the intended manufactured error free straight line edge by the range including 0 micrometers to 1 micrometer in manufactured deviation dimensionally of length or width of the line edges of the line pattern.