End point detection for sputtering and resputtering

A method of depositing material onto a substrate having a substrate layer, comprising:

• sputtering a target within a chamber to deposit target material onto said substrate within said chamber;
• ionizing at least a portion of said sputtered target material to form sputtered target material ions;
• biasing said substrate to attract said sputtered target material ions to deposit onto said substrate;
• sputtering a coil within said chamber to deposit coil material onto said substrate;
• energizing said coil to generate etchant ions in said chamber to resputter target material from said substrate;
• biasing said substrate to attract said etchant ions to resputter target material from said substrate;
• monitoring the wavelengths of radiation emitted by materials resputtered from said substrate while energizing said coil;
• detecting the composition of materials resputtered from said substrate as a function of the wavelengths of emitted radiation monitored while resputtering said substrate;
• and
• terminating said resputtering in response to detection of an etched material composition.

A method of depositing material onto a substrate having a conductor layer and an insulator overlying the conductor layer, comprising:

• sputtering a target within a chamber to deposit metal target material into holes in said insulation layer overlying said conductor layer of a substrate within said chamber;
• ionizing at least a portion of said sputtered target material to form sputtered target material ions;
• biasing said substrate to attract said sputtered target material ions to deposit target material into said holes of said substrate;
• energizing a coil within said chamber with RF energy to inductively couple RF energy into a plasma to generate etchant ions in said chamber to resputter material from said substrate;
• sputtering said coil within said chamber to deposit coil material onto said substrate while generating said etchant ions;
• blocking deposition onto a chamber window of at least some material sputtered from said target and said coil using a wall positioned between said window and said target and coil
• biasing said substrate to attract said etchant ions to resputter target material from the bottoms of holes of said substrate;
• monitoring the wavelengths of radiation emitted by materials resputtered from said substrate while sputtering said coil wherein said monitoring includes reflecting radiation emitted by said plasma through a folded radiation path around said wall to said window and monitoring the wavelengths of radiation transmitted through said window to a wavelength detector positioned outside said chamber window;
• using said detector, detecting the composition of materials resputtered from said substrate as a function of the wavelengths of emitted radiation monitored while resputtering said substrate;
• and
• terminating said resputtering in response to detection of conductor material of said conductor layer.

A reactor for depositing material onto a substrate having a substrate layer of material, comprising:

• a vacuum chamber adapted to maintain a vacuum pressure within said chamber, said chamber having a pressure wall which includes a window;
• a substrate support disposed in said chamber and adapted to support said substrate;
• a target surface disposed in said chamber and adapted to be sputtered to deposit metal material onto said substrate layer;
• a coil disposed within said chamber and positioned to sputter coil material onto said substrate and to inductively couple energy to generate a plasma facing said substrate, said plasma emitting radiation wherein said chamber window is at least partially transparent to at least a portion of said plasma radiation;
• a shield positioned to inhibit deposition of sputtered material onto said window;
• and
• a labyrinth disposed in said chamber between said plasma generation area and said window and adapted to conduct radiation from said plasma generation area to said window.

A reactor for depositing material onto a substrate having a substrate layer of material, comprising:

• a vacuum chamber adapted to maintain a vacuum pressure within said chamber, said chamber having a pressure wall which includes a window;
• a substrate support disposed in said chamber and adapted to support said substrate;
• a target surface disposed in said chamber and adapted to be sputtered to deposit metal material onto said substrate layer;
• an etchant plasma generator disposed within said chamber and positioned to couple energy into the interior of said chamber to generate a plasma for resputtering said substrate, wherein said substrate support is adapted to bias said substrate to attract etchant plasma ions to resputter said substrate and wherein said plasma emits radiation and said chamber window is at least partially transparent to at least a portion of said plasma radiation;
• a shield positioned to inhibit deposition of sputtered material onto said window;
• and
• a labyrinth disposed in said chamber between said plasma generation area and said window and adapted to conduct radiation from said plasma generation area to said window.

A system for depositing material onto a substrate having a substrate layer of material, comprising:

• a chamber having a plasma generation area;
• a substrate support disposed in said chamber and adapted to support said substrate;
• a target disposed in said chamber and adapted to be sputtered to deposit metal material onto said substrate layer;
• a first bias circuit coupled to said target and adapted to bias said target to sputter said target;
• a plasma generator positioned to generate a plasma within said plasma generation area;
• a second bias circuit adapted to bias said substrate to attract ions from said plasma to etch material from said substrate;
• a monitor adapted to monitor radiation emitted by said plasma in said plasma generation area;
• a labyrinth disposed in said chamber between said plasma generation area and said monitor and adapted to conduct radiation from said plasma generation area to said monitor;
• and
• a controller adapted to control said first and second bias circuits to etch material from said substrate after sputtering material onto said substrate;
• said controller further being adapted to be responsive to said monitor to terminate said etching in response to radiation monitored through said labyrinth.

A reactor system for depositing material onto a substrate having a substrate layer of material, comprising:

• vacuum chamber means for maintaining a vacuum pressure, said chamber means having a pressure wall which includes a window;
• means for generating a plasma within said chamber means;
• target means for sputtering metal material within said chamber means to deposit metal material onto said substrate layer;
• substrate biasing means for biasing said substrate to attract plasma ions to etch material from said substrate after metal material is sputtered onto said substrate;
• monitoring means for monitoring radiation emitted by materials within said plasma, said monitoring means including radiation path means adapted to be positioned within said chamber between said plasma and said chamber means window, for reflecting radiation from said plasma to said chamber means window in a folded path;
• and
• means for terminating said etching in response to radiation monitored through said radiation path means.

A system for depositing material onto a substrate having a substrate layer of material, comprising:

• vacuum chamber means for maintaining a vacuum pressure, said chamber means having a pressure wall which includes a window;
• substrate support means disposed in said chamber means for supporting said substrate;
• target means for sputter depositing metal material onto said substrate layer;
• plasma generator means positioned to generate a plasma within a plasma generation area within said chamber means;
• substrate biasing means for biasing said substrate to attract ions from said plasma to etch material from said substrate;
• monitor means for monitoring radiation emitted by said plasma in said plasma generation area, said monitoring means including a radiation detector and also including labyrinth means disposed in said chamber means between said plasma generation area and detector, for conducting radiation from said plasma generation area to said detector in a folded radiation path;
• and
• controller means for controlling said target means, plasma generator means and bias means to etch material from said substrate after sputtering material onto said substrate;
• said controller means further being responsive to said monitoring means to terminate said etching in response to radiation monitored by said monitoring means through said labyrinth means.