Method and device for cutting wire formed on semiconductor substrate
AssigneeFujitsu Limited
InventorsYukio Maruta, Kinichi Mizuno
Life of this patent
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Abstract
Method and device for cutting a wire with a small number of processing operations. The method includes forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire. The method further includes forming a clear region continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam. The clear region is free of stray material of the wire.
Claims16
A method for cutting a wire formed on a semiconductor substrate, the method comprising:
- forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire;
- and
- forming a clear region free of stray material from the wire, horizontally continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam.
A method, for cutting a wire formed on a semiconductor substrate, the method comprising:
- forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire:
- forming a clear region free of stray material from the wire, continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam;
- wherein said forming a cut portion includes forming a first cavity that cuts the wire by scanning the semiconductor substrate with the focused ion beam, and said forming a clear region includes forming a second cavity and a third cavity that intersect the first cavity on opposite sides of the wire;
- and
- wherein the first, second, and third cavities when combined form an H-shaped pattern.
A method for cutting a wire formed on a semiconductor substrate, the method comprising:
- forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire;
- and
- forming a redundant portion, horizontally continuously from the cut portion, for preventing stray material from the wire from being formed continuously with the cut portion.
A method for cutting a wire formed on a semiconductor substrate, the method comprising:
- setting a cutting mode of the wire in accordance with the material of the wire;
- forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire;
- and
- forming a clear region free of stray material from the wire, horizontally continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam when a predetermined cutting mode is set.
A method 7, for cutting a wire formed on a semiconductor substrate, the method comprising:
- setting a cutting mode of the wire in accordance with the material of the wire:
- forming a cut portion by scanning the semiconductor substrate with a focused ion beam to cut the wire;
- and
- forming a clear region free of stray material from the wire, continuously from the cut portion by scanning the semiconductor substrate with the focused ion beam when a predetermined cutting mode is set;
- wherein said forming the cut portion includes forming a first cavity that cuts the wire by scanning the semiconductor substrate with the focused ion beam, and said forming the clear region includes forming a second cavity and a third cavity so that the first, second, and third cavities when combined form an H-shaped pattern.
A device for cutting a wire formed on a semiconductor substrate, the device comprising:
- a processor for cutting a wire by scanning the semiconductor substrate with a focused ion beam;
- and
- a controller, connected to the processor, for controlling the scanning with the focused ion beam, the controller controlling the processor to form a cut portion by cutting the wire and forming a clear region free of stray material from the wire, horizontally continuously from the cut portion.
A device, for cutting a wire formed on a semiconductor substrate, the device comprising:
- a processor for cutting a wire by scanning the semiconductor substrate with a focused ion beam;
- and
- a controller, connected to the processor, for controlling the scanning with the focused ion beam, the controller controlling the processor to form a cut portion by cutting the wire and forming a clear region free of stray material from the wire, continuously from the cut portion;
- wherein the controller controls the processor to form a first cavity that cuts the wire and a second cavity and a third cavity that intersect the first cavity on opposite sides of the wire;
- and
- wherein the controller controls the processor so that the first, second, and third cavities when combined form an H-shaped pattern.
Dependencies are inferred from the claim text.