Layout correction algorithms for removing stress and other physical effect induced process deviation
AssigneeXilinx, Inc.
InventorsShih-Cheng Hsueh, Xiao-Jie Yuan, Daniel Gitlin
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AssigneeXilinx, Inc.
InventorsShih-Cheng Hsueh, Xiao-Jie Yuan, Daniel Gitlin
Estimating the term…
A method for dealing with process specific physical effects applies dimensional modifications to an IC layout to compensate for performance variations caused by the physical effects. Because the dimensional modifications harmonize the performance of the actual IC with the performance of the IC model, time-consuming re-verification operations are not required. Current drive variations caused by shallow trench isolation (STI) stress can be compensated for by adjusting the gate dimensions of the affected transistors to increase or decrease current drive as necessary. Such physical effect compensation can be applied before, after, or even concurrently with optical proximity correction (OPC). The dimensional modifications for physical effect compensation can also be incorporated into an OPC engine.
A method for creating an integrated circuit (IC) layout for an IC to be created using a selected process, the method comprising:
A method for creating a mask set from a physical layout for an integrated circuit (IC), the physical layout comprising a plurality of layout elements, the mask set to be used with a selected process, the method comprising:
A system for applying physical effect compensation to a physical layout for an IC, the system comprising:
Dependencies are inferred from the claim text.