Waveguide type photoreceptor device with particular thickness ratio
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMasaharu Nakaji, Eitaro Ishimura
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Abstract
A waveguide type photoreceptor device of the present invention comprises a waveguide 16a disposed on a Fe-doped InP substrate, the waveguide including an n-cladding layer connected to an n-electrode, an n-light guide layer, a light absorption layer, a p-light guide layer, and a p-cladding layer connected to a p-electrode, laminated onto one another over the Fe-doped InP substrate, and the ratio of the layer thickness of the thicker one of the n-light guide layer and the p-light guide layer to that of the thinner one being between 1.3 and 5 both inclusive.
Claims10
A waveguide type photoreceptor device comprising:
- a semi-insulative semiconductor substrate;
- and
- an optical waveguide layer connected between first and second electrodes and disposed on said semiconductor substrate, having a first cladding layer of a first conductive type, a first light guide layer of the first conductive type, a light absorption layer, a second light guide layer of a second conductive type, and a second cladding layer of the second conductive type laminated onto one another over said semiconductor substrate in that order,
- wherein the ratio of the layer thickness of the thicker one of the first light guide layer and the second guide layer to that of the thinner one is between 1.3 and 5 both inclusive,
- wherein the composition wavelength of the first light guide layer and the second light guide layer is less than 1.3 μm and longer than that of the first cladding layer and second cladding layer, and
- wherein the sum of the layer thickness of the first light guide layer and the second light guide layer is set to any value between 0.9 and 1.2 μm.
Dependencies are inferred from the claim text.