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US 7,031,362 B2Granted
Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity
AssigneeFurukawa Electric Co., Ltd.
InventorsYoung Duk Yoon, Sakiko Sugihara, Naoki Tsukiji
Life of this patent
Estimating the term…
Abstract
An n-InP cladding layer, a GRIN-SCH-MQW active layer, a p-InP cladding layer, p-InGaAsP contact layer and a p-side electrode are laminated sequentially on an n-InP substrate. Moreover, a film having high reflectivity is laminated on a reflection side end surface, and a transmission film is laminated on an emission side end surface. The transmission film has a first film and a second film. The second film is composed of an equivalent film composed of three layers.
Claims44
A semiconductor laser device comprising:
- an active layer positioned between cladding layers, said active layer having
- a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam;
- and
- a transmission film comprising a multi-layer film laminated on said emission side end surface, said transmission film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, wherein:
- at least one film of said multi-layer film includes plural sub-films that collectively are optically equivalent to a single layer film, and
- the at least one film inclues an outer sub-film made of the same material as another film of the multilayer film which is adjacent to the outer sub-film.
3 more elements
The semiconductor laser device of claim 11, wherein said side surface protection layer is formed of InGaP.
A semiconductor laser device comprising:
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam;
- and
- a multi-layer film disposed on said emission side end surface and having a reflectivity of almost zero for said laser beam, said multi-layer film having a reflectivity that is no more than 0.4% for a light which has a wavelength difference of no more than 100 nm with respect to a predetermined oscillation wavelength, wherein said multi-layer film includes a sub-film.
A semiconductor laser module comprising:
- a semiconductor laser device including
- an active layer disposed between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam;
- a transmission film including a multi-layer film laminated on said emission side end surface, said transmission film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, and at least one film of said multi-layer film including plural sub-films that collectively are optically equivalent to a single layer film;
- a temperature control module configured to control a temperature of said semiconductor laser device;
- an optical fiber configured to guide the laser beam emitted from said semiconductor laser device outside;
- and
- an optically coupling lens system configured to optically couple said semiconductor laser device with said optical fiber.
4 more elements
A semiconductor laser module comprising:
- a semiconductor laser device including
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam and an emission side end surface configured to emit the laser beam, and
- a multi-layer film disposed on said emission side end surface and having a reflectivity of almost zero for said laser beam, said multi-layer film having a reflectivity that is no more than 0.4% for a light which has a wavelength difference of no more than 100 mn with respect to a predetermined oscillation wavelength;
- a temperature control module configured to control a temperature of said semiconductor laser device;
- an optical fiber configured to guide the laser beam emitted from said semiconductor laser device outside;
- and
- an optically coupling lens system configured to optically couple said semiconductor laser device with said optical fiber, said multi-layer film including a sub-film.
4 more elements
A method of manufacturing a semiconductor laser device comprising steps of:
- forming an active layer that is positioned between cladding layers, said active layer having
- a reflection side end surface configured to reflect an oscillated laser beam,
- an emission side end surface configured to emit the laser beam;
- forming a transmission film comprising a multi-layer film laminated on said emission side end surface, said transmission film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, said transmission film having a structure of plural films, wherein:
- at least one film of said multi-layer film includes plural sub-films that collectively are optically equivalent to a single layer film, and
- the at least one film includes an outer sub-film made of the same material as another film of the multilayer film which is adjacent to the outer sub-film.
3 more elements
A method of manufacturing a semiconductor laser device comprising steps of:
- forming an active layer between cladding layers, said active layer having,
- a reflection side end surface configured to reflect an oscillated laser beam,
- an emission side end surface configured to emit the laser beam;
- and
- forming a multi-layer film on said emission side end surface having a reflectivity of almost zero for said laser beam, said multi-layer film having a reflectivity that is no more than 0.4% for a light which has a wavelength difference of no more than 100 nm with respect to a predetermined oscillation wavelength, wherein
- said multi-layer film includes a sub-film.
3 more elements
A method of manufacturing a semiconductor laser device comprising steps for:
- forming an active layer between cladding layers, said active layer having
- a reflection side end surface for reflecting an oscillated laser beam,
- an emission side end surface for emitting the laser beam;
- and
- forming a transmission film comprising a multi-layer film laminated on said emission side end surface, said transmission film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, wherein:
- at least one film of said multi-layer film includes plural sub-films that collectively are optically equivalent to a single layer film, and
- the at least one film includes an outer sub-film made of the same material as another film of the multilayer film which is adjacent to the outer sub-film.
4 more elements
A semiconductor laser device comprising:
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam;
- and
- a multi-layer film disposed on said emission side end surface,
- wherein said multi-layer film has a reflectivity profile having reflectivity of no more than 0.4% greater than a minimum reflectivity within a wavelength range defined by a wavelength difference of 100 nm with respect to a predetermined oscillation wavelength, said multi-layer film includes a sub-film.
1 more element
A semiconductor laser module comprising:
- a semiconductor laser device including
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam, and
- a multi-layer film disposed on said emission side end surface, said multi-layer film having a reflectivity profile having reflectivity of no more than 0.4% greater than a minimum reflectivity within a wavelength range defined by a wavelength difference of 100 nm with respect to a predetermined oscillation wavelength;
- a temperature control module configured to control a temperature of said semiconductor laser device;
- an optical fiber configured to guide the laser beam emitted from said semiconductor laser device outside;
- and
- an optically coupling lens system configured to optically couple said semiconductor laser device with said optical fiber, wherein
- said multi-layer film includes a sub-film.
5 more elements
A semiconductor laser device comprising:
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam and an emission side end surface configured to emit the laser beam;
- and
- a multi-layer film laminated on the emission side end surface and having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, wherein:
- at least one film of said multi-layer film further includes plural sub-films which are substantially symmetrically laminated with respect to a center plane in a direction of lamination of the plural sub-films, and
- the at least one film includes an outer sub-film made of the same material as another film of the multilayer film which is adjacent to the outer sub-film.
2 more elements
A semiconductor laser module comprising:
- a semiconductor laser device including
- an active layer disposed between cladding layers, the active layer having a reflection side end surface configured to reflect an oscillated laser beam and an emission side end surface configured to emit the laser beam, and
- a multi-layer film laminated on the emission side end surface and having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, at least one film of the multi-layer film including plural sub-films which are substantially symmetrically laminated with respect to a center plane in a direction of lamination of the plural sub-films;
- a temperature control module configured to control a temperature of said semiconductor laser device;
- an optical fiber configured to guide the laser beam emitted from said semiconductor layer device outside;
- and
- an optically coupling lens system configured to optically couple said semiconductor laser device with said optical fiber.
4 more elements
A method of manufacturing a semiconductor laser device comprising steps of:
- forming an active layer between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam and an emission side end surface configured to emit the laser beam;
- and
- laminating a multi-layer film on the emission side end surface, said multilayer film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, wherein:
- said laminating the multi-layer film includes laminating at least one film by laminating plural sub-films so that the plural sub-films are substantially symmetric with respect to a center plane in a direction of the laminating the plural sub-films, and
- the at least one film includes an outer sub-film made of the same material as another film of the multilayer film which is laminated to the outer sub-film.
2 more elements
A method of manufacturing a semiconductor laser comprising:
- steps for forming an active layer between cladding layers, the active layer having a reflection side end surface for reflecting an oscillated laser beam and an emission side end surface for emitting the laser beam;
- and
- said step for laminating a multi-layer film on the emission side end surface, said multilayer film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, wherein
- said step for laminating the multi-layer film includes laminating at least one film by laminating plural sub-films so that the plural sub-films are substantially symmetric with respect to a center plane in a direction of lamination of the plural sub-films, and
- the at least one film includes an outer sub-film made of the same material as another film of th mulitlayer film which is laminated to the outer sub-film.
2 more elements
A method of designing a semiconductor laser device comprising the steps of:
- determining multi-layer film to be laminated on an emission side end surface of the semiconductor laser device, such that the multi-layer film has a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength;
- and
- determining plural sub-films to be substituted for one film of the multi-layer film, such that the plural sub-films are optically equivalent to the one film, wherein the one film includes an outer sub-film made of the same material as another film of the multilayer film which is adjacent to the outer sub-film.
A semiconductor laser device comprising:
- an active layer positioned between cladding layers, said active layer having a reflection side end surface configured to reflect an oscillated laser beam, and an emission side end surface configured to emit the laser beam;
- and
- a transmission film having a low reflectivity of 0.5% or less within a wavelength range defined by a predetermined wavelength difference with respect to a predetermined oscillation wavelength, the transmission film comprising:
- a second film positioned on said emission side end surface and including a first sub-film laminated to contact with said emission side end surface, a second sub-film laminated to contact with said first sub-film and a third sub-film laminated to contact with said second sub-film, wherein said first and third sub-films have an optical thickness smaller than one quarter of said predetermined oscillation wavelength and the sub-films collectively are optically equivalent to a single layer film, and
- a first film positioned on said second film of said transmission film.
2 more elements
Dependencies are inferred from the claim text.