Semiconductor memory device with late write function and data input/output method therefor
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Ryul Kim, Dae-Hee Jung
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AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Ryul Kim, Dae-Hee Jung
Estimating the term…
An integrated circuit memory device includes a memory cell array, a plurality of data input lines configured to convey data to the memory cell array and a plurality of data output lines configured to convey data from the memory cell array. The device also includes a memory write buffer that receives write data for the memory cell array and responsively drives the data input lines, a sense amplifier and a plurality of sense amplifier input lines configured to convey data to the sense amplifier. The device further includes a selecting circuit coupled to the data input lines, to the data output lines and to the sense amplifier input lines and configured to selectively couple the data input lines to the sense amplifier input lines responsive to a control signal.
An integrated circuit memory device, comprising:
A method of operating an integrated circuit memory device comprises a memory cell array that provides data to a sense amplifier via sense amplifier input lines and a memory write buffer that drives data input lines to the memory cell array, the method comprising:
Dependencies are inferred from the claim text.