Data storage device and method of forming the same
AssigneeHewlett-Packard Development Company, L.P.
InventorsFrederick A. Perner, Andrew L. VanBrocklin, Warren B. Jackson
Life of this patent
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Abstract
A resistive cross point memory cell array comprising a plurality of word lines, a plurality of bit lines, a plurality of cross points formed by the word lines and the bit lines, and a plurality of memory cells, each of the memory cells being located at a different one of the cross points, wherein a first bit line comprises a distributed series diode along an entire length of the bit line such that each of the associated memory cells located along the first bit line is coupled between the distributed series diode and an associated word line.
Claims20
A method for forming a data storage device, comprising:
- forming a plurality of word lines in a first plane;
- forming a plurality of memory elements on the plurality of word lines;
- and
- forming a plurality of bit lines, each bit line being a distributed series diode, the plurality of bit lines being disposed in a second plane that is substantially parallel to the first plane, thereby forming a plurality of cross-points with the plurality of word lines;
- wherein each memory element is disposed at one of the cross points.
A method for forming a data storage device, comprising:
- forming a plurality of word lines;
- forming a plurality of memory elements on the plurality of word lines;
- forming at least one distributed series diode;
- and
- forming a plurality of cross-points with a plurality of word lines;
- wherein each memory element is disposed at one of the cross points and the at least one distributed series diode is adjacent to one of the plurality of bit lines.
A method for using a data storage device, comprising:
- providing an array of memory elements located at cross-points of word lines and bit lines, the word lines being arranged in a first plane, the bit lines being arranged in a second plane, each of the bit lines comprising a distributed series diode;
- and
- selectively isolating a first group of the memory elements from remaining memory elements along a first of the bit lines.
Dependencies are inferred from the claim text.