US 7,031,179 B2 · Bit cell array for preventing coupling effect in read only memory

Abstract

The present invention relates to bit cell arrays of read-only-memories, and more specifically, to a bit cell array capable of preventing a coupling effect between adjacent bit lines. In addition, the bit cell array according to the present invention does not require an additional device in order to prevent the coupling effect. In accordance with the present invention, the bit cell array comprising: a plurality of bit lines arranged in a row in a first direction; a plurality of ground lines in a row in a second direction vertical to the first direction; a plurality of word lines arranged with a zigzag line with respect to the second direction; and a plurality of ROM bit cells partially formed at a cross-section point of the bit lines and the word lines. In the meanwhile, the ROM bit cells are arranged with a zigzag line with respect to adjacent bit lines. Additionally, the ROM bit cells comprise a drain terminal, a gate terminal and a source terminal. The drain terminal is connected to one of bit lines, the gate terminal is connected to one of word lines, and the source terminal is connected to one of ground lines.

Claims11

Dependent claims

A bit cell array of a read-only-memory comprising:

a plurality of bit lines arranged in a row in a first direction;
a plurality of ground lines arranged in a row in a second direction perpendicular to the first direction;
a plurality of word lines arranged such that a direction of the word lines changes alternately with respect to the second direction;
and
a plurality of ROM bit cells partially formed at cross points of the bit lines and the word lines, wherein the ROM bit cells are arranged such that a direction in which the ROM bit cells are arranged changes alternately so as not to be arranged in a row on adjacent bit lines.

2 more elements

A bit cell array by a basic unit of a read-only-memory comprising:

first to fourth bit lines successively formed in a row in a first direction;
first to third ground lines successively formed in a row in a second direction perpendicular to the first direction;
first to fourth word lines arranged such that a direction of the word lines changes alternately with respect to the second direction;
and
a plurality of ROM bit cells partially formed at cross points of the first to fourth bit lines and the first to fourth word lines, wherein the ROM bit cells are arranged such that a direction in which the ROM bit cells are arranged changes alternately so as not to be arranged in a row on adjacent bit lines.

2 more elements

Dependencies are inferred from the claim text.

Bit cell array for preventing coupling effect in read only memory

Life of this patent

Bit cell array for preventing coupling effect in read only memory

Life of this patent

Abstract

Claims11