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US 7,031,111 B2Granted
Ferromagnetic tunnel magnetoresistive devices and magnetic head
AssigneeHitachi Global Storage Technologies Japan, Ltd.
InventorJun Hayakawa
Life of this patent
Estimating the term…
Abstract
A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.
Claims3
A ferromagnetic tunnel magnetoresistive element, comprising:
- a first ferromagnetic metal layer;
- a first insulating barrier layer formed on the first ferromagnetic metal layer;
- a half-metallic ferromagnetic layer formed on the first insulating barrier layer;
- a second insulating barrier layer formed on the half-metallic ferromagnetic layer;
- and a second ferromagnetic metal layer formed on the second insulating barrier layer,
- wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and another terminal for applying a second bias voltage between the half-metallic ferromagnetic layer and the first or second ferromagnetic metal layer.
3 more elements
A magnetic head provided with a magnetoresistive element comprising:
- a first ferromagnetic metal layer;
- a first insulating barrier layer formed on the first ferromagnetic metal layer;
- a half-metallic ferromagnetic layer formed on the first insulating barrier layer;
- a second insulating barrier layer formed on the half-metallic ferromagnetic layer;
- and a second ferromagnetic layer formed on the second insulating barrier layer,
- wherein the element further comprises a terminal for applying a first bias voltage between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and another terminal for applying a second bias voltage between the half-metallic ferromagnetic layer and the first or second ferromagnetic metal layer.
3 more elements
Dependencies are inferred from the claim text.