Microlithographic illumination method and a projection lens for carrying out the method
AssigneeCarl Zeiss SMT GmbH
InventorsToralf Gruner, Manfred Maul, Rudolf Von Buenau
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AssigneeCarl Zeiss SMT GmbH
InventorsToralf Gruner, Manfred Maul, Rudolf Von Buenau
Estimating the term…
A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.
A method for compensating wavefront deformations in a projection lens that includes at least one birefringent optical component and that is provided for imaging a pattern arranged in an object plane of the projection lens onto an image plane of the projection lens comprising:
A projection lens for a microlithographic projection system for imaging a pattern arranged in an object plane onto an image plane of the projection lens employing light that contains a first light ray having a first polarization direction and a second light ray having a second polarization direction that differs from the first polarization direction,
A method for fabricating a projection lens comprising optical components and being usable for transmitting light containing a first light ray having a first polarization direction and a second light ray having a second polarization direction that differs from the first polarization direction, wherein the optical components may be illuminated by a transmitted light beam containing light rays having differing angles of incidence on the optical components and wherein a difference in the lengths of a first optical path traversed by the first light ray and a second optical path traversed by the second light ray occurs within at least one region of the image plane of the projection lens due to the optical configuration employed, wherein the method comprises:
An optical corrector for installation in a projection lens for a microlithographic projection system for imaging a pattern arranged in an object plane onto an image plane of the projection lens employing light that contains a first light ray having a first polarization direction and a second light ray having a second polarization direction that differs from the first polarization direction, the projection lens comprising optical components that may be illuminated by transmitted light rays at varying angles of incidence, the optical components including at least one birefringent optical component transited by the light and contributing to the difference in length of the first and second optical path through birefringence,
A method for manufacturing semiconductor devices or other types of micro-devices comprising:
A method for manufacturing semiconductor devices or other types of micro-devices comprising:
Dependencies are inferred from the claim text.