Solid-state image-sensing device
AssigneeMinolta Co., Ltd.
InventorsYoshio Hagihara, Tomokazu Kakumoto
Life of this patent
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Abstract
In a solid-state image-sensing device, when an image sensing operation is performed in each pixel, a MOS transistor T1 is turned on and a MOS transistor T4 is turned off to make a MOS transistor T2 operate in a subthreshold region. When a reset operation is performed in each pixel, the MOS transistor T1 is turned off and the MOS transistor T4 is turned on to feed a constant voltage to the gate and drain of the MOS transistor T2. Then, the MOS transistor T4 is turned off, then the voltage at the node “a” is reset, and then a pulse signal φV is fed to a MOS transistor T5 to obtain an output. By using the thus obtained output as compensation data, variations in sensitivity among individual pixels are reduced.
Claims6
A solid-state image-sensing device comprising:
- a plurality of pixels, each pixel capable of outputting electric signals either in a first mode in response to a first resetting signal in which the electric signals are natural-logarithmically proportional to an amount of incident light or in a second mode in response to a second resetting signal in which the electric signals are linearly proportional to the amount of incident light;
- and
- a detection circuit for detecting variations in sensitivity among the pixels set in each of the first and second modes;
- wherein:
- the detection circuit provides the first and second resetting signals, and wherein the first resetting signal has different timing from the second resetting signal.
Dependencies are inferred from the claim text.