US 7,030,919 B2Granted

Solid state image pick-up device

AssigneeNEC Electronics Corporation

InventorsHiroaki Ohkubo, Yasutaka Nakashiba

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Abstract

The solid state image pick-up device comprises a chip wherein an object to be photographed is put directly on the back surface of the chip, a light incident on the object enters the inner portion of the chip, signal electric charges generated in the inner portion of the chip by the light, the signal electric charges are collected in a photo detective region and the photo detective region has a barrier diffusion layer adjacent thereto so as to collect the signal electric charges effectively. The above-mentioned structure of the solid state image pick-up device can provide superior features that the chip of the solid state image pick-up device is protected from the deterioration of elements included in the chip and the destruction of the elements by Electro Static Discharge, resulting in the reliability improvement of the chip.

Claims8

Dependent claims

A solid state image pick-up device comprising

a semiconductor substrate, and
a photo detective region formed in one surface region of said semiconductor substrate,
wherein light incident on an object on another surface of said semiconductor substrate enters an inner portion of said semiconductor substrate, said photo detective region collects signal electric charges that are generated in said inner portion of said semiconductor substrate by said incident light and said signal electric charges are outputted to be converted to an image of said object, and
wherein said semiconductor substrate has one conduction type, a photo detective diffusion layer constituting said photo detective region has another conduction type opposite to said one conduction type, said photo detective diffusion layer has a barrier layer having said one conduction type between said photo detective diffusion layer and another photo detective diffusion layer adjacent thereto, and said photo detective diffusion layer contacts a diffusion layer having said one conduction type at a bottom portion of said photo detective diffusion layer.

1 more element

Dependencies are inferred from the claim text.