Solid-state image pickup device
AssigneeNEC Electronics Corporation
InventorYasutaka Nakashiba
Life of this patent
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Abstract
The present invention discloses a solid-state image pickup device in which a photoelectric conversion part having a photoelectric conversion region, and a logic circuit part are formed on a semiconductor substrate, and outputs a potential change caused by the charges generated in the photoelectric conversion region, and is provided with a light shielding layer that covers the logic circuit part, and a light shielding film that defines the region of beam incidence on the photoelectric conversion region, where the light shielding film is provided closer to the semiconductor substrate than the light shielding layer.
Claims25
A solid-state image pickup device comprising:
- a multilevel wiring structure including a first group of wirings at a first level and a second group of wirings at a second level, said first level being closer to a semiconductor substrate than said second level,
- a photoelectric conversion part on said semiconductor substrate, said photoelectric conversion part having a photoelectric conversion region,
- a logic circuit part on said semiconductor substrate, said logic circuit part including a plurality of transistors to manipulate an electrical signal produced from said photoelectric conversion part and having a first wiring formed at said first level,
- a light shielding layer covering said logic circuit part, and
- a light shielding film defining a region of beam incidence on said photoelectric conversion region,
- wherein said light shielding film is formed at said first level and provided at a height closer to said semiconductor substrate than said light shielding layer.
A solid-state image pickup device comprising:
- a multilevel wiring structure formed on a semiconductor substrate;
- first and second levels of a wiring layer provided in said multilevel wiring structure, said first level being closer to said semiconductor substrate than said second level;
- a photoelectric conversion part converting incident light to an electrical charge and further converting said electrical charge into an electrical signal;
- a logic circuit part receiving and handling said electrical signal and having a first wiring formed at said first level,
- said photoelectric conversion part and said logic circuit part being on said semiconductor substrate;
- a light shielding layer covering the logic circuit part;
- and
- a light shielding film covering said photoelectric conversion part,
- wherein said light shielding film is formed at said first level and provided at a height closer to said semiconductor substrate than said light shielding layer.
A solid-state image pickup device comprising:
- a multilevel wiring structure on a semiconductor substrate;
- first and second levels of a wiring layer provided in said multilevel wiring structure, said first level being closer to said semiconductor substrate than said second level;
- an image sensor part producing an analog signal in response to light incident to said image sensor part;
- a first circuit part producing a digital signal in response to said analog signal;
- a second circuit part performing a signal processing operation on said digital signal,
- said image sensor part and said first and second circuit parts being formed on said semiconductor substrate;
- a first wiring provided in at least one of said first and second circuit parts;
- a first light shielding layer covering said image sensor part;
- and
- a second light shielding layer covering said first and second circuit parts, wherein,
- said first light shielding layer is provided closer to said semiconductor substrate than said second light shielding layer, and
- said first wiring and said first light shielding layer are provided in said first level.
Dependencies are inferred from the claim text.