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US 7,030,684 B2Granted
High voltage switch circuit of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorDoe Cook Kim
Life of this patent
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Abstract
The present invention discloses a high voltage switch circuit of a semiconductor device which can efficiently switch a high voltage over about 20V required in a flash memory even in a low voltage below about 1.4V by reducing increase of a threshold voltage by a back bias, facilitate development of a low voltage memory device, and reduce an area of a pumping capacitor.
Claims5
A high voltage switch circuit of a semiconductor device, comprising:
- an input unit for outputting a pumping clock signal by logically combining a clock signal and an enable signal;
- a pumping unit for outputting a pumping voltage by a pumping operation using the pumping clock signal received from the input unit, wherein the pumping unit includes;
- a first capacitor for increasing an output voltage of the pumping unit in response to the pumping clock signal so that the pumping voltage is outputted;
- an inverter for inverting the pumping clock signal;
- a second capacitor for increasing a voltage of a first node in response to an output of the inverter;
- and
- a LVN transistor for connecting an output terminal of the pumping unit with the first node according to a voltage level of the first node;
- a first native transistor connected between the first node and a high power supply terminal and its gate is connected to the output terminal of the pumping unit;
- a second native transistor connected between the first node and a well on which the LVN transistor is formed and its gate is connected to the output terminal of the pumping unit;
- and
- a switch unit for switching a second high voltage according to the pumping voltage.
8 more elements
Dependencies are inferred from the claim text.