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AssigneeRenesas Technology Corp.
InventorsAkira Yamazaki, Fukashi Morishita, Yasuhiko Taito, Nobuyuki Fujii, Mako Okamoto
Estimating the term…
Well bias voltages are generated in accordance with a logic power supply voltage and a memory power supply voltage. The transistor included in a control circuit in a memory core is constituted of a logic transistor manufactured through the same manufacturing steps as those for the transistors of a logic formed on the same semiconductor substrate. Well bias voltages (VBB, VPP) are applied to a back gate of this logic transistor. A memory integrated with a logic on a common semiconductor substrate is provided which allows a transistor of a control circuit therein to be manufactured through the same manufacturing process as that of the logic and allows reduction of current consumption.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.