Semiconductor device for adjusting threshold value shift due to short channel effect
AssigneeInfineon Technologies AG
InventorsJorg Berthold, Rafael Nadal Guardia
Life of this patent
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Abstract
A semiconductor device detects and adjusts leakage current dependent on threshold voltage of an integrated semiconductor device. To adjust the threshold voltage variation due to uncertainties in the channel length induced by the fabrication process (short channel effect) in the semiconductor a comparison between small and long channel devices is proposed. According to the comparison result, a bias potential is provided to the semiconductor device to adjust the threshold voltage.
Claims18
A semiconductor device comprising
- a test circuit including a first transistor having a short channel length, the first transistor being in a first well,
- a reference circuit including a second transistor having a long channel length, the second transistor being in a second well,
- a comparator circuit for comparing an output of the test circuit with an output of the reference circuit,
- a bias circuit for providing a bias potential to the first well based on a difference between the output of the test circuit and the output of the reference circuit.
A method for detecting and adjusting variations of the threshold voltage caused by short channel effects in a semiconductor device, the method comprising
- providing a test circuit including a first transistor having a short channel length, the first transistor being in a first well;
- providing a reference circuit including a second transistor having a long channel length, the second transistor being in a second well;
- comparing an output of the test circuit with an output of the reference circuit for providing a comparison result;
- and
- applying a bias potential to the first well based on the comparison result.
Dependencies are inferred from the claim text.