Area sensor and display apparatus provided with an area sensor

An area sensor comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element and a plurality of thin film transistors,
• wherein:
• light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode generates an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

An area sensor comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element and a plurality of thin film transistors,
• wherein:
• the plurality of thin film transistors control light emission of the electroluminescence element,
• light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode and the plurality of thin film transistors generate an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

An area sensor comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element, a switching TFT, an electroluminescence driving TFT, a reset TFT, a buffer TFT and a selective TFT, wherein:
• the switching TET and the electroluminescence driving TFT control light emission of the electroluminescence element,
• light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode and the plurality of thin film transistors generate an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

A display apparatus comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element and a plurality of thin film transistors,
• wherein:
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

A display apparatus comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element and a plurality of thin film transistors,
• wherein:
• a light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode generates an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

A display apparatus comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element and a plurality of thin film transistors,
• wherein:
• the plurality of thin film transistors control light emission of the electroluminescence element,
• a light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode and the plurality of thin film transistors generate an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.

A display apparatus comprising a sensor portion, the sensor portion comprising:

• a plurality of pixels, each of the plurality of pixels comprising a photodiode, an electroluminescence element, a switching TFT, an electroluminescence driving TFT, a reset TFT, a buffer TFT and a selective TFT, wherein:
• the switching TFT and the electroluminescence driving TFT control light emission of the electroluminescence element,
• light emitted from the electroluminescence element is reflected from a subject to be radiated to the photodiode,
• the photodiode and the plurality of thin film transistors generate an image signal from the light reflected to the photodiode,
• the photodiode includes a photoelectric conversion layer that is in contact with a part of a P-type semiconductor layer and an N-type semiconductor layer,
• the photoelectric conversion layer is made of an amorphous semiconductor film, and
• the photoelectric conversion layer is thicker than the P-type semiconductor layer and the N-type semiconductor layer.