Semiconductor constructions

A semiconductor construction, comprising:

• a semiconductor substrate;
• a stack supported by the semiconductor substrate;
• the stack comprising an electrically insulative cap over an electrically conductive material;
• the electrically insulative cap of the stack having a thin central region and a thicker peripheral region, the thin central region joining to the thicker peripheral region at a step;
• an electrically conductive pillar supported by the semiconductor substrate, the pillar having an uppermost surface and a lateral periphery;
• an electrically conductive cap on the electrically conductive pillar and having a lateral periphery extending outwardly beyond the lateral periphery of the electrically conductive pillar, the electrically conductive cap and electrically conductive pillar differing in composition relative to one another;
• at least one first electrically insulative spacer along the step and at least one second electrically insulative spacer along the lateral periphery of the electrically conductive cap;
• the first and second electrically insulative spacers having the same composition as one another;
• an electrically insulative material over the stack and over the electrically conductive cap;
• and
• an electrical interconnect extending through the electrically insulative material to the electrically conductive material of the stack;
• the electrical interconnect extending through the thin central region of the electrically insulative cap.