Semiconductor device having aluminum and metal electrodes and method for manufacturing the same
AssigneeDenso Corporation
InventorsKeiji Shinyama, Shoji Miura, Ichiharu Kondo
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Abstract
A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
Claims16
A semiconductor device comprising:
- a semiconductor substrate;
- an aluminum electrode disposed on the substrate;
- a protection film disposed on the aluminum electrode;
- an opening disposed on the protection film for exposing the aluminum electrode;
- and
- a metal electrode disposed on a surface of the aluminum electrode through the opening,
- wherein the aluminum electrode includes a concavity disposed under the opening and approximately coextensive with a lower portion of the opening,
- wherein the aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity,
- wherein the surface of the aluminum electrode includes multiple concavities and multiple convexities, and
- wherein the aluminum electrode includes an additive having an etch rate in an acid etchant equal to or smaller than that of aluminum in the aluminum electrode so that the convexities are provided on the surface of the aluminum electrode.
Dependencies are inferred from the claim text.