Under bump metallurgic layer
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorMin-Lung Huang
Life of this patent
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Abstract
An under bump metallurgic (UBM) layer which is adapted for a chip is disclosed. The UMM layer alleviate the loss of electromigration resulting from current crowing effect at the corner of UBM layer near the transmission line. By increasing the thickness of the UBM layer at the particular region which is close to the transmission line, losses of the UBM layer due to electromigration can be compensated. The life time of the chip is, therefore, enhanced.
Claims8
An under bump metallurgic (UBM) layer adapted for a chip, the chip comprising a bonding pad and a transmission line coupled thereto, wherein the UBM layer is formed over the bonding pad and the UBM layer comprises a plurality of metal layers and at least one liner layer, and the liner layer is formed among the metal layers, wherein the liner layer is formed only close to an end of the transmission line which is connected to the bonding pad such that a portion of the UBM layer which is close to the transmission line is thicker than a portion of the UBM layer which is away from the transmission line.
A conductive structure over a bonding pad, adapted for a chip, the chip comprising the bonding pad and a transmission line coupled thereto, the conductive structure comprising:
- an under bump metallurgical (UBM) layer formed over the bonding pad, wherein the UBM layer comprises a plurality of metal layers, and only a portion of one of the metal layers at a region which is close to the transmission line is thicker than a remaining portion of the one of the metal layers which is away from the transmission line such that a portion of the UBM layer which is close to the transmission line is thicker than a portion of the UBM layer which is away from the transmission line;
- and
- a conductive bump, wherein a bottom of the conductive bump is connected to the UBM layer.
An under bump metallurgic (UBM) layer adapted for a chip, the chip comprising a banding pad and a transmission line coupled thereto, wherein the UBM layer is formed over the bonding pad and the UBM layer comprises a plurality of metal layers, and only a portion of one of the metal layers at a region which is close to the transmission line is thicker than a remaining portion of the one of the metal layers which is away from the transmission line such that a portion of the UBM layer which is close to the transmission line is thicker than a portion of the UBM layer which is away from the transmission line.
Dependencies are inferred from the claim text.