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AssigneeInternational Business Machines Corporation
InventorsStephen M. Gates, Christos D. Dimitrakopoulos, Alfred Grill, Son Van Nguyen
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Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa, said dielectric material has a covalently bonded tri-dimensional network structure.
An interconnect structure comprising at least a dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa and wiring regions, said dielectric material has a covalently bonded tri-dimensional network structure.
A dielectric material comprising elements of Si, C, O, H having a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, a hardness from about 0.2 to about 2 GPa, a cohesive strength from about 1.7 to about 4.5 J/m2, and a crack development velocity in water of not more than 1×10−10 m/sec for a film thickness from about 1.1 to about 2.8 microns.
Dependencies are inferred from the claim text.