Tuneable electromagnetic bandgap structures based on high resistivity silicon substrates
AssigneeUniversity of Dayton
InventorsGuru Subramanyam, Spartak Gevorgian
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Abstract
Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.
Claims42
An electrically tunable electromagnetic band gap structure comprising:
- a semiconductive substrate having an oxide layer and having generally a planar surface;
- a signal strip provided on the generally planar surface of the oxide layer;
- a tunable ferroelectric layer;
- and
- a patterned metal layer having ground lines and an electrode on a surface of the tunable ferroelectric layer, said ground lines and said electrode being separated by a gap, and said signal strip and said electrode being separated by the tunable ferroelectric layer provided therebetween.
A method of forming an electrically tunable electromagnetic bandgap structure, said method comprising:
- providing a semiconductive substrate having an oxide layer and having generally a planar surface;
- providing a signal strip on said generally planar surface of the oxide layer;
- providing a tunable ferroelectric layer;
- and
- providing a patterned metal layer having ground lines and an electrode on a surface of the tunable ferroelectric layer, said ground lines and said electrode being separated by a gap, and said signal strip and said electrode being separated by the tunable ferroelectric layer provided therebetween.
An electrically tunable electromagnetic bandgap structure comprising:
- a substrate having a first permittivity and having a generally planar surface;
- first, second, and third electrodes positioned on the generally planar surface of the substrate, said first, second, and third electrodes being separated to form a pair of first gaps therebetween;
- a tunable dielectric layer positioned on the first, second, and third electrodes and in said first gaps, the tunable dielectric layer having a second permittivity greater than said first permittivity, and said second electrode being a signal strip;
- and
- fourth, fifth, and sixth electrodes positioned on a surface of the tunable dielectric layer, said fourth, fifth, and sixth electrodes being opposite the first, second, and third electrodes, and said fourth, fifth, and sixth electrodes being separated by a second gap therebetween.
Dependencies are inferred from the claim text.