Precursor for hafnium oxide layer and method for forming halnium oxide film using the precursor

An improved capacitor structure comprising:

• a lower electrode;
• a dielectric layer formed on the lower electrode;
• and
• an upper electrode formed on the dielectric layer,
• wherein the dielectric layer is deposited on the lower electrode by a method for forming a hafnium oxide layer, comprising:
• preparing a solution of a hafnium oxide precursor containing a nitrogen compound bound to HfCl4, the nitrogen compound including pyridines or nitriles;
• adsorbing the hafnium oxide precursor solution onto a surface of a substrate in a reactor;
• and
• oxidizing the product adsorbed on the surface of the substrate by supplying an oxidizing agent into the reactor, to form an atomic hafnium oxide layer on the substrate wherein the binding force between the resulting hafnium oxide layer and the substrate is enhanced over that obtained when said nitrogen compound is not bound to said HfCl4 in said hafnium oxide precursor.

An improved transistor structure comprising:

• a source electrode;
• a drain electrode;
• a substrate having a conductive region between the source electrode and the drain electrode;
• a gate dielectric layer formed on the conductive region of the substrate;
• and
• a gate electrode formed on the gate dielectric layer,
• wherein the gate dielectric layer is deposited on the conductive region by a method for forming a hafnium oxide layer, comprising:
• preparing a solution of a hafnium oxide precursor containing a nitrogen compound bound to HfCl4, the nitrogen compound including pyridines or nitriles;
• adsorbing the hafnium oxide precursor solution onto a surface of a substrate in a reactor;
• and
• oxidizing the product adsorbed on the surface of the substrate by supplying an oxidizing agent into the reactor, to form an atomic hafnium oxide layer on the substrate wherein the binding force between the resulting hafnium oxide layer and the substrate is enhanced over that obtained when said nitrogen compound is not bound to said HfCl4 in said hafnium oxide precursor.

An improved capacitor structure comprising:

• a lower electrode;
• a dielectric layer formed on the lower electrode;
• and
• an upper electrode formed on the dielectric layer,
• wherein the dielectric layer is deposited on the lower electrode by a method for forming a hafnium oxide layer, comprising:
• preparing a solution of a hafnium oxide precursor containing a nitrogen compound bound to HfCl4, the nitrogen compound including amines of the following formula:
• NR1R2R3
• wherein R1, R2, and R3 are independently hydrogen, halogen atom, and a substituted or unsubstituted C1–C10 alkyl group,
• adsorbing the hafnium oxide precursor solution onto a surface of a substrate in a reactor;
• and
• oxidizing the product adsorbed on the surface of the substrate by supplying an oxidizing agent into the reactor, to form an atomic hafnium oxide layer on the substrate wherein the binding force between the resulting hafnium oxide layer and the substrate is enhanced over that obtained when said nitrogen compound is not bound to HfCl4 in said hafnium oxide precursor.

An improved transistor structure comprising:

• a source electrode;
• a drain electrode;
• a substrate having a conductive region between the source electrode and the drain electrode;
• a gate dielectric layer formed on the conductive region of the substrate;
• and
• a gate electrode formed on the gate dielectric layer,
• wherein the gate dielectric layer is deposited on the conductive region by a method for forming a hafnium oxide layer, comprising:
• preparing a solution of a hafnium oxide precursor containing a nitrogen compound bound to HfCl4, the nitrogen compound including amines of the following formula:
• NR1R2R3
• wherein R1, R2, and R3 are independently hydrogen, halogen atom, and a substituted or unsubstituted C1–C10 alkyl group,
• adsorbing the hafnium oxide precursor solution onto a surface of a substrate in a reactor;
• and
• oxidizing the product adsorbed on the surface of the substrate by supplying an oxidizing agent into the reactor, to form an atomic hafnium oxide layer on the substrate wherein the binding force between the resulting hafnium oxide layer and the substrate is enhanced over that obtained when said nitrogen compound is not bound to HfCl4 in said hafnium oxide precursor.