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US 7,030,448 B2Granted
Mask ROM and the method of forming the same and the scheme of reading the device
AssigneeApplied Intellectual Properties Co., Ltd.
InventorErik S. Jeng
Life of this patent
Estimating the term…
Abstract
The structure of the nonvolatile memory includes a substrate having source/drain formed at unselected sides and source/drain with extension source/drain formed at other selected sides. A gate dielectric layer is formed on the substrate and a gate is formed on the gate dielectric layer. An isolation layer is formed along the surface of the gate. Spacers are formed attached on the sidewalls of the gate.
Claims12
A Mask ROM, comprising:
- a substrate having source/drain formed at unselected side and source/drain with extension source/drain formed at other selected side, wherein a “digital zero” area is defined in said source/drain formed at said unselected side, and “digital one” area is defined in said source/drain with extension source/drain;
- gate dielectric layer formed on said substrate;
- gate formed on said gate dielectric layer;
- isolation layer formed along the surface of said gate;
- and
- spacers formed attached on the sidewalls of said isolation layer.
3 more elements
Dependencies are inferred from the claim text.