Stack-film trench capacitor and method for manufacturing the same
AssigneeProMOS Technologies Inc.
InventorYu-Ying Lian
Life of this patent
Estimating the term…
Abstract
A trench capacitor includes an electrode having a first conductive area formed in a trench provided in a substrate, and a second conductive area extending from a bottom of the trench, the second conductive area being electrically coupled to the first conductive area and spaced apart from the first conductive area; a storage node having a first conductive extension extending into a first dielectric space provided between the first conductive area and the second conductive area of the electrode, and a second conductive extension extending into a second dielectric space provided within the second conductive area of the electrode; and a dielectric layer electrically insulating the electrode from the storage node.
Claims12
A trench capacitor, comprising:
- an electrode including
- a first conductive area formed in a trench provided in a substrate, and
- a second conductive area extending from a bottom of the trench, the second conductive area being electrically coupled to the first conductive area and spaced horizontally apart from the first conductive area;
- a storage node including
- a first conductive extension extending into a first dielectric space provided between the first conductive area and the second conductive area of the electrode, and
- a second conductive extension extending into a second dielectric space provided within the second conductive area of the electrode;
- and
- a dielectric layer electrically insulating the electrode from the storage node.
A trench capacitor formed in a trench formed within a semiconductor substrate, comprising:
- an electrode having a double-crown structure including
- an outer conductive crown comprising a doped semiconductor substrate, and
- an inner conductive crown spaced apart from the outer conductive crown and electrically coupled to the outer conductive crown;
- a storage node extending into a first dielectric space formed between the outer conductive crown and the inner conductive crown and extending into a second dielectric space formed within the inner conductive crown;
- and
- a dielectric layer electrically insulating the electrode from the storage node.
A trench capacitor formed in a trench within a semiconductor substrate, comprising:
- an electrode having a plurality of electrode prongs, each of the electrode prongs being electrically coupled to the other electrode prongs, wherein at least one electrode prong is comprised of a portion of a doped substrate;
- a storage node having a plurality of storage node prongs, each of the storage node prongs being electrically coupled to the other storage node prongs, at least one of the storage node prongs extending into a dielectric space provided between two of the electrode prongs;
- and
- a dielectric layer electrically insulating the electrode from the storage node.
Dependencies are inferred from the claim text.