Semiconductor device having sense amplifier including paired transistors
AssigneeRenesas Technology Corp.
InventorsSatoshi Yodogawa, Satoshi Kawasaki, Takeshi Hamamoto
Life of this patent
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Abstract
A semiconductor device includes two sense amplifiers provided on a semiconductor substrate. Each of two sense amplifiers is formed of a pair of transistors. Two transistors are separated from each other by an element-isolating insulating portion provided on the semiconductor substrate. Therefore unlike the conventional, two transistors do not share the source region with each other, resulting in a semiconductor device with an improved sensitivity of a sense amplifier.
Claims7
A semiconductor device, in which two sense amplifiers activated are arranged adjacent each other and each of said two sense amplifiers receives a pair of data,
- said two sense amplifiers respectively including
- a first transistor receiving one of said pair of data and being of a conductive type, and
- a second transistor forming a pair with the first transistor for receiving the other of said pair of data and being of the same conductive type as that of said first transistor, wherein
- source regions of said first transistors of said two sense amplifiers are insulated from each other by an element-isolating insulating portion and connected with a first interconnection, or source regions of said second transistors of said two sense amplifiers are insulated from each other by said element-isolating insulating portion and connected with a second interconnection.
A semiconductor device, in which two sense amplifiers are arranged adjacent each other and each of said two sense amplifiers receive a pair of data,
- said two sense amplifiers respectively including
- a first transistor receiving one of said pair of data and being of a conductive type, and
- a second transistor forming a pair with the first transistor for receiving the other of said pair of data and being of the same conductive type as that of said first transistor, wherein
- in one of said two sense amplifiers, a source region of said first transistor and a source region of said second transistor are common,
- in the other of said two sense amplifiers, a source region of said first transistor and a source region of said second transistor are common,
- in one of said two sense amplifiers, a drain region of said first transistor, the common source region, and a drain region of said second transistor are disposed in this order,
- the other of said two sense amplifiers is provided at a prescribed distance from the common source region and drain regions of one of said two sense amplifiers in a direction orthogonal to the disposition direction,
- in the other of said two sense amplifiers, a drain region of said first transistor, the common source region, and a drain region of said second transistor are disposed in this order so as to correspond to the disposition of portions of one of two sense amplifiers.
Dependencies are inferred from the claim text.