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US 7,030,430 B2Granted
Transition metal alloys for use as a gate electrode and devices incorporating these alloys
AssigneeIntel Corporation
InventorsMark Doczy, Nathan Baxter, Robert S. Chau, Kari Harkonen, Teemu Lang
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Abstract
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed.
Claims8
A device comprising:
- a substrate having a source region and a drain region formed therein:
- an insulating layer disposed on the substrate and extending between the source and drain regions;
- and
- a gate electrode overlying the insulating layer, the gate electrode formed of an alloy including
- approximately 20 to 50 atomic percent of a transition metal, the transition metal selected from a group consisting of titanium, zirconium, tantalum, and hafnium,
- approximately 30 to 60 atomic percent of carbon, and
- up to approximately 20 atomic percent of aluminum.
4 more elements
Dependencies are inferred from the claim text.