Semiconductor light emitting device and fabrication method thereof
AssigneeSony Corporation
InventorsHiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata
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Abstract
Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
Claims29
A semiconductor light emitting device comprising:
- a substantially planar substrate defining a principal plane;
- a compound semiconductor layer formed on the principal plane of the substrate, wherein said compound semiconductor layer includes at least one difference-in-height portion including a horizontal plane parallel to the principal plane of the substrate and multiple adjacent trenches with horizontal bottoms and vertical sidewalls;
- a crystal growth layer formed on the surface of the compound semiconductor layer wherein at least a portion of the crystal growth layer includes at least one facet structure oriented along an inclined plane with respect to the surface of the substrate, wherein the growth of said facet structure depends on a shape of the difference-in-height portion wherein the crystal growth layer forms a sawtooth configuration;
- and
- a first conductive layer, an active layer and a second conductive layer formed on the crystal growth layer in a stacked arrangement and oriented along the inclined plane.
A semiconductor light emitting device comprising:
- a substantially planar substrate defining a principal plane, wherein a compound layer composed of a wurtzite compound is formed on the substrate along the principal plane of the substrate wherein the compound layer includes a difference-in-height portion formed in a surface of the substrate layer including a horizontal plane parallel to the principal plane of the substrate and multiple adjacent trenches with horizontal bottoms and vertical sidewalls;
- a crystal growth layer formed on the surface of the compound layer wherein at least a portion of the crystal growth layer includes at least one facet structure oriented along an inclined plane that is inclined with respect to the principal plane of the substrate, wherein growth of the facet structure depends on a shape of the difference-in-height portion wherein the crystal growth layer forms a sawtooth configuration;
- a first conductive cladding layer, an active layer and a second conductive layer formed on the crystal growth layer in a sequentially stacked arrangement oriented along two or more planes of the crystal growth layer including the inclined plane such that one or more light emission regions are formed;
- and
- one or more electrodes separately formed in the light emission regions.
Dependencies are inferred from the claim text.