Semiconductor light emitting device and fabrication method thereof

A semiconductor light emitting device comprising:

• a first GaN based semiconductor layer that has on top thereof a plurality of concave portions formed into a band-like shape with predetermined intervals therebetween;
• a second GaN based semiconductor layer formed on the first GaN based semiconductor layer;
• a layered structure that is formed on the second GaN based semiconductor layer and that comprises an n-type GaN based semiconductor layer, an active layer, and a p-type GaN based semiconductor layer;
• an n-type electrode that is formed on the n-type GaN based semiconductor layer on the portion where the layered structure is partially removed and become exposed;
• and
• a transparent p-type electrode formed on the p-type GaN based semiconductor layer, wherein
• the p-type electrode serves as an emission detection surface, and
• an air layer is formed between the bottom surface of the second GaN based semiconductor layer and the concave portion.