Semiconductor quantum dot optical amplifier, and optical amplifier module and optical transmission system using the same

A semiconductor quantum dot optical amplifier for amplifying an optical signal, comprising:

• a semiconductor substrate made of InP;
• a first conductive type clad layer formed on the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass;
• wherein the active layer is formed by repeatedly performing an epitaxial process using InGaAsP, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InGaAs, where a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier for amplifying an optical signal, comprising:

• a semiconductor substrate made of InP;
• a first conductive type clad layer formed on the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass;
• wherein the active layer is formed by repeatedly performing an epitaxial process using InAlGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InAlGaAs, where a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a semiconductor quantum dot optical amplifier and an optical fiber for transferring the optical signal;
• wherein the semiconductor quantum dot optical amplifier includes
• a semiconductor substrate made of GaAs;
• a first conductive type clad layer formed on an upper surface of the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the incident optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass;
• wherein the active layer is formed by repeatedly performing an In(x)Ga(1-x)As epitaxial process using InGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an In(z)Ga(1-z)As epitaxial process using InGaAs, where x and z values range from 0 to 0.5, and a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a first wavelength division multiplexer located in an input portion of the optical signal and dividing the optical signal into at least one wavelength band;
• at least one semiconductor quantum dot optical amplifier for amplifying the optical signal coupled and incident to a band divided from the first wavelength division multiplexer through an active operation of a semiconductor quantum dot;
• a second wavelength division multiplexer for coupling and outputting the optical signal amplified by the at least one semiconductor quantum dot optical amplifiers;
• and
• an optical fiber for coupling respective components of the respective optical amplifier modules to transfer the optical signal;
• wherein the semiconductor quantum dot optical amplifier comprises
• a semiconductor substrate made of GaAs,
• a first conductive type clad layer formed on the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass,
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the optical signal, and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass;
• wherein the active layer is formed by repeatedly performing an In(x)Ga(1-x)As epitaxial process using InGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an In(z)Ga(1-z)As epitaxial process using InGaAs, where x and z values range from 0 to 0.5, and a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a semiconductor quantum dot optical amplifier, an optical fiber for transferring the optical signal and an isolator on either side of the at least semiconductor quantum dot optical amplifier module,
• wherein the semiconductor quantum dot optical amplifier includes
• a semiconductor substrate made of GaAs;
• a first conductive type clad layer formed on an upper surface of the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the incident optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass.

An optical transmission system for transmitting optical signal, comprising:

• an input portion in which at least one different wavelength channel is coupled to one optical signal and output;
• an amplifying portion including at least one semiconductor quantum dot optical amplifier module arranged at a regular interval to receive the optical signal from the input portion and amplify the different wavelength channel;
• an output portion dividing the optical signal from the amplifying portion into at least channel of different wavelength;
• and
• a transmitting portion for coupling respective components of the optical transmission system to each others,
• wherein the semiconductor quantum dot optical amplifier module comprises a semiconductor quantum dot optical amplifier and an optical fiber for transferring the optical signal,
• wherein the semiconductor quantum dot optical amplifier includes
• a semiconductor substrate made of GaAs;
• a first conductive type clad layer formed on an upper surface of the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the incident optical signal ;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass, wherein the active layer is formed by repeatedly performing an In(x)Ga(1-x)As epitaxial process using InGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an In(z)Ga(1-z)As epitaxial process using InGaAs, where x and z values range from 0 to 0.5, and a y value ranges from about 0.4 to 1.

An optical transmission system for transmitting optical signal, comprising:

• an input portion in which at least one different wavelength channel is coupled to one optical signal and output;
• an amplifying portion including at least one semiconductor quantum dot optical amplifier module arranged at a regular interval to receive the optical signal from the input portion and amplify the different wavelength channel;
• an output portion dividing the optical signal from the amplifying portion into at least channel of different wavelength;
• and
• a transmitting portion for coupling respective components of the optical transmission system to each other;
• and
• an isolator in either side of the semiconductor quantum dot optical amplifier module.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a first wavelength division multiplexer located in an input portion of the optical signal and dividing the optical signal into at least one wavelength band;
• at least one semiconductor quantum dot optical amplifier for amplifying the optical signal coupled and incident to a band divided from the first wavelength division multiplexer through an active operation of a semiconductor quantum dot;
• a second wavelength division multiplexer for coupling and outputting the optical signal amplified by the at least one semiconductor quantum dot optical amplifiers;
• an optical fiber for coupling respective components of the respective optical amplifier modules to transfer the optical signal;
• and
• an isolator on either side of the at least semiconductor quantum dot optical amplifier module.

An optical transmission system for transmitting an optical signal in a network, comprising:

• an amplifying portion including at least one semiconductor quantum dot optical amplifier module and amplifying the transmitted optical signal according a section;
• an Input/Output portion performing a communication to receive/output the optical signal from/to an external portion;
• and
• an isolator in either side of the at least semiconductor quantum dot optical amplifier module.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising a semiconductor quantum dot optical amplifier and an optical fiber for transferring the optical signal, wherein the semiconductor quantum dot optical amplifier includes

• a semiconductor substrate made of InP;
• a first conductive type clad layer formed on an upper surface of the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the incident optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass,
• wherein the active layer is formed by repeatedly performing an epitaxial process using InGaAsP, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InGaAs, where a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising a semiconductor quantum dot optical amplifier and an optical fiber for transferring the optical signal, wherein the semiconductor quantum dot optical amplifier includes

• a semiconductor substrate made of InP;
• a first conductive type clad layer formed on an upper surface of the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass;
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the incident optical signal;
• and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass,
• wherein the active layer is formed by repeatedly performing an epitaxial process using InAlGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InAlGaAs, where a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a first wavelength division multiplexer located in an input portion of the optical signal and dividing the optical signal into at least one wavelength band;
• at least one semiconductor quantum dot optical amplifier for amplifying the optical signal coupled and incident to a band divided from the first wavelength division multiplexer through an active operation of a semiconductor quantum dot;
• a second wavelength division multiplexer for coupling and outputting the optical signal amplified by the at least one semiconductor quantum dot optical amplifiers;
• and
• an optical fiber for coupling respective components of the respective optical amplifier modules to transfer the optical signal;
• wherein the semiconductor quantum dot optical amplifier includes
• a semiconductor substrate made of InP,
• a first conductive type clad layer formed on the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass,
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the optical signal, and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass,
• wherein the active layer is formed by repeatedly performing an epitaxial process using InGaAsP, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InGaAs, where a y value ranges from about 0.4 to 1.

A semiconductor quantum dot optical amplifier module for amplifying an optical signal, comprising:

• a first wavelength division multiplexer located in an input portion of the optical signal and dividing the optical signal into at least one wavelength band;
• at least one semiconductor quantum dot optical amplifier for amplifying the optical signal coupled and incident to a band divided from the first wavelength division multiplexer through an active operation of a semiconductor quantum dot;
• a second wavelength division multiplexer for coupling and outputting the optical signal amplified by the at least one semiconductor quantum dot optical amplifiers;
• and
• an optical fiber for coupling respective components of the respective optical amplifier modules to transfer the optical signal, wherein the semiconductor quantum dot optical amplifier includes:
• a semiconductor substrate made of InP;
• a first conductive type clad layer formed on the semiconductor substrate and allowing conductive particles required to amplify the optical signal to pass,
• a quantum dot active layer formed close to an upper surface of the first conductive type clad layer and including layers of quantum dots amplifying the optical signal, and
• a second conductive type clad layer formed close to an upper surface of the quantum dot active layer and operating to correspond to the first conductive type clad layer to allow the conductive particles required for an amplification to pass,
• wherein the semiconductor substrate is made of InP, and the active layer is formed by repeatedly performing an epitaxial process using InAlGaAs, an In(y)Ga(1-y)As quantum dot using InGaAs, and an epitaxial process using InAlGaAs, where a y value ranges from about 0.4 to 1.