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US 7,030,414 B2Granted
III group nitride compound semiconductor luminescent element
AssigneeToyoda Gosei Co., Ltd.
InventorsShinya Asami, Hiroshi Watanabe, Jun Ito, Naoki Shibata
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Abstract
A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.
Claims20
A Group III nitride compound semiconductor light-emitting device comprising:
- a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer;
- and
- an intermediate layer under said multilayer,
- wherein said intermediate layer comprises:
- a first intermediate layer of InGaN thicker than said InGaN well layer,
- a second intermediate layer on said first intermediate layer, and
- a third intermediate layer of AlGaN on said second intermediate layer.
4 more elements
A Group III nitride compound semiconductor light-emitting device comprising:
- a multilayer having a quantum well structure;
- and
- an intermediate layer under said multilayer,
- wherein said intermediate layer comprises:
- a first intermediate layer thicker than a well layer in said quantum well structure,
- a second intermediate layer on said first intermediate layer, and
- a third intermediate layer on said second intermediate layer.
4 more elements
Dependencies are inferred from the claim text.