Semiconductor photocathode and photoelectric tube using the same
AssigneeHamamatsu Photonics K.K.
InventorsTadataka Edamura, Minoru Niigaki
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Abstract
A semiconductor photocathode comprises a p+-type semiconductor substrate of GaSb, and a p−-type light absorbing layer of InAsSb. A p+-type hole blocking layer is formed between the substrate and the light absorbing layer having wider energy band gap than that of the light absorbing layer, the blocking layer being made of AlGaSb.
Claims12
A semiconductor photocathode emitting electrons from a front surface in response to an incidence of infrared radiation, comprising:
- a semiconductor substrate made of GaSb;
- a light absorbing layer made of InAs(1−x)Sbx, where, 0<x<1;
- a first compound semiconductor layer having wider energy band gap than that of said light absorbing layer, said first compound semiconductor layer including Al,
- wherein said first compound semiconductor layer is formed between said semiconductor substrate and said light absorbing layer;
- first and second electrodes respectively formed on front and back surfaces of said semiconductor photocathode;
- and
- an n-type contact layer interposed between said first electrode and said front surface,
- wherein said semiconductor substrate is p-type, and
- wherein said first compound semiconductor layer is p-type.
A semiconductor photocathode emitting electrons in response to an incidence of infrared radiation, comprising:
- a semiconductor substrate made of GaSb;
- a light absorbing layer made of InAs(1−x)Sbx, where, 0<x<1;
- a first compound semiconductor layer having wider energy band gap than that of said light absorbing layer, said first compound semiconductor layer including Al, wherein said first compound semiconductor layer is formed between said semiconductor substrate and said light absorbing layer;
- and
- a second compound semiconductor layer provided so as to sandwich said light absorbing layer together with said first compound semiconductor layer,
- wherein both said first and second compound semiconductor layers are made of AlyGa(1−y)Sb, where, 0<x<1.
A semiconductor photocathode emitting electrons in response to an incidence of infrared radiation, comprising:
- a semiconductor substrate made of GaSb;
- a light absorbing layer made of InAs(1−x)Sbx, where, 0<x<1;
- a first compound semiconductor layer having wider energy band gap than that of said light absorbing layer, said first compound semiconductor layer including Al, wherein said first compound semiconductor layer is formed between said semiconductor substrate and said light absorbing layer;
- and
- a second compound semiconductor layer provided so as to sandwich said light absorbing layer together with said first compound semiconductor layer,
- wherein both said first and second compound semiconductor layers are made of AlyGa(1−y)AszSb(1−z), where, 0<y<1, and 0<z<1.
A semiconductor photocathode emitting electrons in response to an incidence of infrared radiation, comprising:
- a semiconductor substrate made of GaSb;
- a light absorbing layer made of InAs(1−x)Sbx, where, 0<x<1;
- a first compound semiconductor layer having wider energy band gap than that of said light absorbing layer, said first compound semiconductor layer including Al, wherein said first compound semiconductor layer is formed between said semiconductor substrate and said light absorbing layer;
- and
- a second compound semiconductor layer provided so as to sandwich said light absorbing layer together with said first compound semiconductor layer,
- wherein both the first and second compound semiconductor layer comprise a superlattice layer formed by a stack of alternate layers of AlSb and GaSb.
Dependencies are inferred from the claim text.