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US 7,030,313 B2Granted
Thin film solar cell and method of manufacturing the same
AssigneeSharp Kabushiki Kaisha
InventorsTakashi Inamasu, Masafumi Shimizu, Kenji Wada
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Abstract
A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impurities of 0.2 to 8 atom % and has a thickness of 10 to 200 nm.
Claims5
A method of making a solar cell including a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate, the method comprising:
- forming the p-layer, the i-layer, and the n-layer in this order on the substrate, wherein the p-layer and the i-layer comprise thin films including silicon and each contains a crystalline component;
- wherein the p-layer comprises p-type impurities of 0.2 to 8 atom % and has a thickness of 10–200 nm;
- and
- wherein the p-layer and the i-layer are continuously formed by plasma enhanced CVD while maintaining plasma and while varying a gas flow rate.
1 more element
A method of making a solar cell, the method comprising:
- forming a p-layer, an i-layer and an n-layer on a substrate;
- wherein the p-layer and the i-layer each comprise silicon and each comprises a crystalline component;
- forming the p-layer so that it contains impurities of 0.2–8 atomic % and has a thickness of 10–200 nm;
- and
- wherein the p-layer has an integrated intensity ratio of the X-ray diffraction peak at (220) with respect to the X-ray diffraction peak at (111) at least 3.055 times as large as that of the i-layer deposited as a single layer to the same thickness on a substrate.
2 more elements
Dependencies are inferred from the claim text.