Supercritical fluid-assisted deposition of materials on semiconductor substrates
AssigneeAdvanced Technology Materials, Inc.
InventorsChongying Xu, Thomas H. Baum
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Abstract
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
Claims58
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid, a surfactant and a precursor of the material to be deposited on the substrate, wherein the precursor comprises a precursor selected from the group consisting of high k dielectric precursors, barrier layer precursors, metallization precursors, organometallic compounds, organometallic complexes, and Lewis base adducts thereof.
A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the precursor is insufficiently volatile for chemical vapor deposition in absence of the supercritical fluid.
The deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the precursor comprises a barrier layer precursor selected from the group consisting of titanium (IV) tetrakis-dialkylamides, titanium pyrozolates, titanium amido compounds, titanium imido compounds, Ta (IV) pentakis(dialkylamido) compounds, tetrakis diethylamido titanium (TDEAT), tetrakis dimethylamino titanium (TDMAT), pentakis ethylmethylamido tantalum (PEMAT), pentakis dimethylamido tantalum (PDMAT), pentakis diethylamido tantalum (PDEAT) and corresponding W and Nb analogs of such titanium and tantalum compounds.
Dependencies are inferred from the claim text.