Thick film dielectric compositions for use on aluminum nitride substrates
AssigneeE. I. Du Pont de Nemours and Company
InventorsYong Cho, Kenneth Warren Hang
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Abstract
present invention relates to a Cd-free and Pb-free glass composition comprising, based in mol %, 1–10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5–30% MgO, 0.3–5% CuO, 0–2.5% P2O5, 0–2.5% ZrO2, 24–45% ZnO, 2–10% Al2O3, 35–50% SiO2 and 0.1–3% A2O where A is selected from the group of alkali elements and mixtures thereof wherein the glass composition is useful in thick paste dielectric materials which are compatible with AlN substrates.
Claims7
A glass composition comprising, in mol %, 1–10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5–30% MgO, 0.3–5% CuO, 0–2.5% P2O5, 0–2.5% ZrO2, 24–45% ZnO, 2–10% Al2O3, 35–50% SiO2 and 0.1–3% A2O where A is one or more alkali metal elements.
Dependencies are inferred from the claim text.