Method of fabricating oxides with low defect densities
AssigneeTokyo Electron Limited
InventorWayne L. Johnson
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Abstract
A method and system for forming a low defect oxide in a plasma processing chamber. By pulsing at least one of an RF power source and a processing gas, the growth of the oxide can be regulated. During periods in which the processing gas is not injected, an inert gas is injected to keep a substantially constant flow rate.
Claims27
A method of forming an oxide layer on a substrate in a plasma processing chamber using a first RF source for coupling energy to a plasma and a second RF source for biasing the substrate, the method comprising the steps of:
- injecting into the plasma processing chamber a process gas for growing an oxide layer;
- applying a continuous power from the first RF source;
- pulsing the second RF power source and
- heating the substrate within the plasma processing chamber substantially simultaneously with at least one of said step of applying and said step of pulsing,
- wherein said step of applying and said step of pulsing occur substantially, simultaneously.
A method of forming an oxide layer on a substrate in a plasma processing chamber using a first RF source for coupling energy to a plasma and a second RF source for biasing the substrate, the method comprising the steps of:
- injecting into the plasma processing chamber a process gas for growing an oxide layer;
- pulsing the first RF source using a first duty cycle;
- and
- pulsing a processing gas substantially in synchronization with the first duty cycle.
A method of forming an oxide layer on a substrate in a plasma processing chamber using a first RF source for coupling energy to a plasma and a second RF source for biasing the substrate, the method comprising the steps of:
- applying a continuous power from the first RF source;
- pulsing the second RF power source;
- and
- pulsing an inert gas substantially in synchronization with an inverse of a duty cycle of the second RF power source.
A method of forming an oxide layer on a substrate in a plasma processing chamber using a first RF source for coupling energy to a plasma and a second RF source for biasing the substrate, the method comprising the steps of:
- pulsing the first RF source using a first duty cycle;
- pulsing a processing gas substantially in synchronization with the first duty cycle;
- and
- pulsing an inert gas substantially in synchronization with a second duty cycle, wherein the first and second duty cycles are substantially inversed.
Dependencies are inferred from the claim text.