Process for deposition of a thin layer on an oxidized layer of a substrate

Abstract

A thin layer comprising at least a metal and a non-metallic chemical element is deposited on an oxidized layer of a substrate arranged in a reactor. The thin layer is formed by a plurality of superposed atomic layers formed by repetition of a reaction cycle comprising at least a first step of injecting a first halogenated metallic reagent into the reactor, a first reactor purging step, a second step of injecting a second reagent comprising the non-metallic chemical element into the reactor and a second reactor purging step. The process comprises, after each deposition of an atomic layer, at least one densification sequence of the atomic layer comprising a third purging step, an additional injection step of the second reagent and a fourth purging step. The time length of a densification sequence is substantially longer than the time length of a reaction cycle.

Dependencies are inferred from the claim text.