Systems and methods for forming tantalum oxide layers and tantalum precursor compounds

A method of forming a tantalum oxide layer on a substrate, the method comprising:

• providing a substrate;
• providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt)4(OCH2CH2OiPr), Ta(OMe)4(OMe)4(OCH2CH2OlPr), and combinations thereof, wherein Me=methyl, Et=ethyl, and iPr=isopropyl;
• and
• directing the one or more vaporized precursor compounds to the substrate to form a tantalum oxide layer on or more surfaces of the substrate;
• wherein providing a vapor comprising the one or more precursor compounds and directing the one more precursor compound is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

A method of forming a tantalum oxide layer on a substrate, the method comprising:

• providing a substrate;
• providing a vapor comprising one or more precursor compounds of the formula Ta(OR1)x(O-R2-OR3), wherein each R is an organic group, x=3-4, and y=I-2;
• providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR1)x(O-R2-OR3)y;
• and
• directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate;
• wherein Ta(OR1)x(O-R2-OR3)yis selected from the group consisting of Ta(OEt)4(OCH2CH2OiPr), Ta(OMe)4(OCH2CH2OiPr), and combinations thereof, wherein Me=methyl, Et=ethyl, and iPr=isopropyl;
• wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds;
• and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.

The method of forming a tantalum oxide layer on a substrates, the method comprising:

• providing a substrate;
• providing a vapor comprising one or more precursor compounds selected from the group consisting of Ta(OEt)4(OCH2CH2OiPr), Ta(OMe)4(OCH2CH2OiPr), Ta(OMe)4(OCH2CH2OiPr), and combinations therof, wherein Me=methyl, Et=ethyl, and iPr =isopropyl;
• wherein Me =methyl, Et =ethyl, and iPr =isopropyl;
• directing the one or more sources of a reaction gas;
• and gases to the substrate to form a tantalum oxide layer

A method of forming a tantalum oxide layer on a substrate, the method comprising:

• providing a substrate;
• providing a vapor comprising one or more precursor compounds of the formula Ta(OR1)x(O—R2—OR3)y (Formula I), wherein each R is an organic group, x=3-4, and y=1-2;
• providing a vapor comprising one or more metal-containing precursor compounds different than Ta(OR1)x(O—R2—OR3)y;
• and
• directing the one or more vaporized precursor compounds of Formula I and the one or more other vaporized precursor compounds to the substrate to form a tantalum oxide layer on one or more surfaces of the substrate.
• wherein Ta(OR1)x(O—R2—OR3)y is selected from the group consisting of Ta(OEt)4(OCH2CH2OiPr), Ta(OMe)4(OCH2CH2OiPr), and combinations thereof, wherein Me=methyl, Et=ethyl, and iPr=isopropyl;
• wherein providing the vapor comprising the one or more precursor compounds of Formula I and the vapor comprising the one or more other precursor compounds;
• and directing the one or more precursor compounds of Formula I and the one or more other precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.