Method of forming oxide layer in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHo Min Son
Life of this patent
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Abstract
Provided is related to a method of forming an oxide layer of a semiconductor device. In the method, a first oxide layer is formed with a first thickness on a semiconductor substrate, that is comparted into first and second fields, and then a second oxide layer is formed on the first field with a second thickness, while preventing damages on the surface of the semiconductor substrate, after removing the first oxide layer on the first field. By the method, oxide layers different in thickness can be formed in separate field on the semiconductor substrate, without damages due to an etching process while enhancing the physical quality of the oxide layers.
Claims20
A method of forming oxide layer in a semiconductor device, comprising the steps of:
- forming a first oxide layer on a semiconductor substrate divided into a low-voltage operational element field and a high-voltage operational element field;
- partially etching the first oxide layer from the low-voltage operational element field by a predetermined thickness by means of an etching process, wherein the first oxide layer retains a remaining target thickness;
- removing the first oxide layer by means of a pre-cleaning process;
- and forming a second oxide layer on the low-voltage operational element field.
A method of forming oxide layer in a semiconductor device, comprising the steps of:
- forming a first oxide layer on a semiconductor substrate comparted into a low-voltage operational element field and a high-voltage operational element field;
- removing the first oxide layer from the low-voltage operational element field;
- forming a passivation oxide layer by oxidizing a surface of the semiconductor substrate in the low-voltage operational element field with an oxidation process, in order to eliminate damages on the surface of the semiconductor substrate in the low-voltage operational element field;
- removing the passivation oxide layer by means of a pre-cleaning process;
- and forming a second oxide layer on the low-voltage operational element field.
Dependencies are inferred from the claim text.