Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
AssigneeMicron Technology, Inc.
InventorsJanos Fucsko, Grady S. Waldo, Kevin J. Torek, Li Li
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Abstract
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.
Claims53
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum, comprising:
- providing a substrate comprising silicon nitride and an oxide of aluminum;
- and
- exposing the silicon nitride and the oxide to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide.
A method of etching silicon nitride substantially selectively relative to aluminum oxide, comprising:
- providing a substrate comprising silicon nitride and a densified aluminum oxide;
- and
- exposing the silicon nitride and the densified aluminum oxide to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the densified aluminum oxide.
Dependencies are inferred from the claim text.