Method for manufacturing circuit devices

A method of manufacturing circuit devices using a substrate comprising a thick conductive film that supports a fine conductive pattern layer on a conductive film pattern, wherein portions of the fine conductive pattern layer extend beyond corresponding portions of the conductive film pattern to form anchor portions between adjacent portions of the conductive film pattern, the method comprising;

• mounting semiconductor elements on said conductive pattern layer of said substrate via an insulating adhesive layer, wherein the insulating adhesive layer partially fills the anchor portions;
• electrically connecting electrodes of the semiconductor elements with portions of said conductive pattern layer;
• covering the semiconductor elements with a sealing resin layer and filling remaining sections of the anchor portions with the sealing resin layer;
• and
• removing said thick conductive film to expose rear surfaces of the sealing resin layer and said conductive film pattern.

A method of manufacturing circuit devices, comprising:

• preparing a laminated plate by laminating a thin first conductive film and a thick second conductive film via a third conductive film;
• forming a fine conductive pattern layer by etching said first conductive film into a pattern;
• removing the third conductive film by use of said conductive pattern layer as a mask and thus forming anchor portions where said third conductive film is depressed further inside than said conductive pattern layer;
• fixedly fitting semiconductor elements on said conductive pattern layer via an insulating adhesive layer and partially filling said insulating adhesive layer into said anchor portions;
• electrically connecting electrodes of said semiconductor elements with parts of said conductive pattern layer;
• covering said semiconductor elements with a sealing resin layer and filling said sealing resin layer into said anchor portions;
• and
• exposing said sealing resin layer and said third conductive film on the rear surface by removing said second conductive film.