Semiconductor device fabrication method

A method for fabricating a semiconductor device comprising:

• the step of forming gate electrodes respectively in a first element region and in a second element region which are formed over a semiconductor substrate, with a gate insulation film formed therebetween;
• the step of forming a first resist film over the semiconductor substrate and the gate electrodes, the first resist film being opened in the first element region;
• the step of implanting a dopant in the first element region with the first resist film and the gate electrodes as a mask to form a first dopant diffused region;
• the first ashing processing step of ashing the first resist film with a reaction gas of oxygen;
• the step of forming a sidewall insulation film over the side wall of the gate electrode;
• the step of forming a second resist film over the semiconductor substrate, the gate electrode and the sidewall insulation film, the second resist film being opened in the second element region;
• the step of implanting a dopant in the first element region with the second resist film, the gate electrode and the sidewall insulation film as a mask to form a second dopant diffused region;
• and
• the second ashing processing step of ashing the second resist film with a mixed gas mixing a reaction gas of oxygen and another reaction gas.

A method for fabricating a semiconductor device comprising:

• the step of forming gate electrodes respectively in a first element region and in a second element region which are formed over a semiconductor substrate, with a gate insulation film formed therebetween;
• the step of forming a first resist film over the semiconductor substrate and the gate electrodes, the first resist film being opened in the first element region;
• the step of implanting a dopant in the first element region with the first resist film and the gate electrodes as a mask to form a first dopant diffused region;
• the first ashing processing step of ashing the first resist film;
• the first chemical processing step of removing the first resist film with a chemical liquid;
• the step of forming a sidewall insulation film over the side wall of the gate electrode;
• the step of forming a second resist film over the semiconductor substrate, the gate electrode and the sidewall insulation film, the second resist film being opened in the first element region;
• the step of implanting a dopant in the first element region with the second resist film, the gate electrode and the sidewall insulation film as a mask to form a second dopant diffused region;
• the second ashing processing step of ashing the second resist film;
• and
• the second chemical processing step of removing the second resist film with a chemical liquid,
• a chemical liquid processing period of time in the first chemical liquid processing step being shorter than a chemical liquid processing period of time in the second chemical liquid processing step.

A method for fabricating a semiconductor device comprising:

• the step of forming a gate electrode over a semiconductor substrate with a gate insulation film formed therebetween;
• the step of implanting a dopant in the semiconductor substrate with the gate electrode with a mask to form a first dopant diffused region in the semiconductor substrate on both sides of the gate electrode;
• the first cleaning processing step of cleaning the substrate with a chemical liquid;
• the first thermal processing step of performing thermal processing to activate the dopant in the first dopant in the first dopant diffused region;
• the step of forming a sidewall insulation film over the side wall of the gate electrode;
• the step of implanting a second dopant in the semiconductor substrate with the gate electrode and the sidewall insulation film as a mask to form a second dopant diffused region;
• the second cleaning processing step of cleaning the semiconductor substrate with a chemical liquid;
• and
• the second thermal processing step of performing thermal processing for activating the second dopant in the second dopant diffused region,
• a cleaning processing period of time in the first cleaning processing step being shorter than a cleaning processing period of time in the second cleaning processing step.