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US 7,030,015 B2Granted
Method for forming a titanium nitride layer
AssigneePowerchip Semiconductor Corp.
InventorChing-Hua Chen
Life of this patent
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Abstract
A method for forming a titanium nitride layer. A pre-heating step is performed, wherein a substrate is placed in a chamber comprising inert gas with a pre-heating pressure between 0.1˜3 torr. A TiN deposition step is then performed, wherein the substrate is placed in a reactive gas at least comprising NH3 and TiCl4, and the first TiN deposition step has a reactive pressure of more than 5 torr and a reactive temperature of more than 500° C.
Claims17
A method for forming a titanium nitride layer, comprising:
- pre-heating a substrate, wherein the substrate is placed in an inert gas ambiance at a pre-heating pressure between 0.1˜3 torr;
- and
- depositing a first TiN layer overlying the substrate, wherein the substrate is placed in a first reactive gas at least comprising NH3 and TiCl4 at a first reactive pressure of more than 5 torr and a first reactive temperature of more than 500° C.
A method for forming a titanium nitride layer, comprising:
- pre-heating a substrate, wherein the substrate is placed in an inert gas ambiance at a pre-heating pressure between 0.1˜3 torr;
- depositing a first TiN layer on the substrate, wherein the substrate is placed in a first reactive gas at least comprising NH3 and TiCl4 with a first reactive pressure less than 1 torr and a first reactive temperature less than 500° C.;
- performing first annealing operation with a first annealing pressure of between 1˜3 torr;
- depositing a second TiN layer on the first TiN layer, wherein the substrate is placed in a second reactive gas at least comprising NH3 and TiCl4 with a second reactive pressure of more than 5 torr and a second reactive temperature of more than 500° C.;
- and
- performing a second annealing operation with a second annealing pressure more than 5 torr.
3 more elements
Dependencies are inferred from the claim text.