Method for fabricating semiconductor device using high dielectric material
AssigneeHynix Semiconductor Inc.
InventorHyeok Su Kang
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Abstract
Disclosed is a method for fabricating a semiconductor device using high dielectric material. The method comprises the steps of: forming an Hf thin film on a silicon substrate; oxidizing the Hf thin film by performing an oxidizing process; and performing an annealing process after the oxidizing process, thereby forming a gate oxide film comprising an HfSixOy thin film and an HfO2 thin film on the silicon substrate, in which “X” is 0.4˜0.6 and “Y” is 1.5˜2.5. Therefore, since a high dielectric material HfO2, which is thicker than SiO2, is used, leakage current caused by direct tunneling of SiO2 can be prevented.
Claims5
A method for fabricating a semiconductor device using high dielectric material, the method comprising the steps of:
- forming an Hf thin film on a silicon substrate;
- oxidizing the Hf thin film to form a HfO2, thin film and a HfSixOy thin film which construct a pate oxide film on the silicon substrate, in which “x” is 0.4˜0.6 and “y” is 1.5˜2.5;
- and
- annealing the HfO2 thin film and the HfSixOy thin film to increase the thickness of HfO2 thin film and to decrease the thickness of HfSixOy thin film after oxidizing step.
Dependencies are inferred from the claim text.