Methods for creating electrophoretically insulated vias in semiconductive substrates and resulting structures
AssigneeMicron Technology, Inc.
InventorsWarren M. Farnworth, Dale W. Collins, Steven M. McDonald
Life of this patent
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Abstract
Methods for creating lined vias in semiconductor substrates. Using electrophoretic deposition techniques, micelles of a lining material are deposited on the wall of the via, reacting with the surface of the wall until the entire wall is covered by the lining material. The lining material is then fixed in place to form a layer lining the via. The lined via may then be filled with a desired material. For example, a via lined with an insulative material may be filled with a material such as copper to create an insulated conductive via through the substrate.
Claims87
A method of forming a via lined with an insulating material in a semiconductor substrate, the method comprising:
- providing a semiconductor substrate;
- forming at least one via in the semiconductor substrate, the at least one via comprising a via opening accessible from at least a first surface of the semiconductor substrate and at least one sidewall beginning at the first surface and extending into the semiconductor substrate to define a bore of the at least one via;
- exposing the bore of the at least one via in the semiconductor substrate to a solution containing insulating material micelles;
- and
- depositing the insulating material micelles on the at least one sidewall of the at least one via in the semiconductor substrate to form an insulating layer thereon.
A method of lining a via in a semiconductor substrate, the method comprising:
- providing a semiconductor substrate including at least one via comprising a via opening accessible on a first surface of the semiconductor substrate and at least one sidewall beginning at the first surface and extending into the semiconductor substrate to define a bore of the at least one via;
- exposing the bore of the at least one via in the semiconductor substrate to a solution containing lining material micelles;
- depositing the lining material micelles on the at least one sidewall of the at least one via in the semiconductor substrate to form a lining material layer thereon.
A method of forming an insulated conductive element through a semiconductor substrate, the method comprising:
- providing a semiconductor substrate including a first surface and a second surface;
- forming at least one via through the semiconductor substrate, the at least one via comprising a first via opening accessible on the first surface a second via opening on the second surface, and at least one sidewall extending from the first surface at the first via opening to the second surface at the second via opening to define the bore of the at least one via;
- exposing the bore of the at least one via in the semiconductor substrate to a solution containing insulating material micelles;
- depositing the insulating material micelles on the at least one sidewall of the of the at least one via in the semiconductor substrate to form an insulating material layer thereon;
- and depositing a conductive material within the at least one via in the semiconductor substrate to form a conductive element therein surrounded by the insulating material layer.
Dependencies are inferred from the claim text.